Abstract:Nanowire field emitters have great potential for use as large-area gated field emitter arrays (FEAs). However, the micrometer-scale cathode patterns in gated FEA devices will reduce regulation of the gate voltage and limit the field emission currents of these devices as a result of field-screening effect among the neighboring nanowires. In this article, a ring-shaped ZnO nanowire pad is proposed to overcome this problem. Diode measurements show that the prepared ring-shaped ZnO nanowire pad arrays shows uniform emission with a turn-on field of 5.9 V/µm and a field emission current density of 4.6 mA/cm2 under an applied field of 9 V/µm. The ZnO nanowire pad arrays were integrated into coplanar-gate FEAs and enhanced gate-controlled device characteristics were obtained. The gate-controlled capability was studied via microscopic in-situ measurements of the field emission from the ZnO nanowires in the coplanar-gate FEAs. Based on the results of both simulations and experiments, we attributed the enhanced gate-controlled device capabilities to more efficient emission of electrons from the ZnO nanowires as a result of the increase edge area by designing ring-shaped ZnO nanowire pad. The results are important to the realization of large-area gate-controlled FEAs based on nanowire emitters for use in vacuum electronic devices.

Design, Fabrication and Characterization of Molybdenum Field Emitter Arrays (Mo-FEAs)

Self-Aligned, Gated Bulk Molybdenum Field Emitter Arrays

Bulk Molybdenum Field Emitters By Inductively Coupled Plasma Etching

Focusing Field Emission Arrays Constructed by Self-Aligned Photolithography

High-Density Gate Aperture Arrays For Mo-Feas Fabricated By Electron Beam Lithography

Precisely-controlled Fabrication of Single ZnO Nanoemitter Arrays and Their Possible Application in Low Energy Parallel Electron Beam Exposure.

Coplanar-gate ZnO Nanowire Field Emitter Arrays with Enhanced Gate-Control Performance Using a Ring-Shaped Cathode

Integration of ZnO Nanowires in Gated Field Emitter Arrays for Large-Area Vacuum Microelectronics Applications

Fabrication of ZnO Nanowire Field-Emitter Arrays with Focusing Capability

High Emission Current Density, Vertically Aligned Carbon Nanotube Mesh, Field Emitter Array

A Graphene-Coated Mo Tip Array For Highly-Efficient Nanostructured Electron Field Emitters

Fabrication of Transparent Gated ZnO Nanowire Field Emitter Arrays

Optimizing the Field Emission Properties of ZnO Nanowire Arrays by Precisely Tuning the Population Density and Application in Large-Area Gated Field Emitter Arrays.

Fabrication of Large-Area Arrays of Coaxial Gated ZnO Nanowire Field Emitters for Vacuum Microelectronics Applications

Sub-nanosecond Electron Emission from Electrically Gated Field Emitting Arrays

Fabrication of Coaxis-Gated ZnO Nanowire Field-Emitter Arrays With In-Plane Focusing Gate Electrode Structure

Field-Emission Properties of Nanostructured Wo3 Arrays Fabricated Using Tungsten Hot-Filament Chemical Vapor Deposition

High Current Field Emission from Individual Non-Linear Resistor Ballasted Carbon Nanotube Cluster Array

Optimizing Performance of Coaxis Planar-Gated ZnO Nanowire Field-Emitter Arrays by Tuning Pixel Density.

Fabrication of Carbon Nanotube Lateral Field Emitters

Fabrication of Gated ZnO Nanowire Field Emitter Arrays for Pulsed Flat Panel X-ray Source