Abstract:The precise extraction of a thin slice (lamellae) from nano electronic devices using a focused ion beam (FIB) is crucial for transmission electron microscopy analysis, but it remains a challenge for 100 nm and beyond scale device components. In this study, we introduce a new method that utilizes the device's own features as markers during FIB thinning process by continuously monitoring the intermediate structures with secondary electron scanning electron microscopy (SE-SEM) imaging. This allows for the targeted extraction of the desired device component with high precision. We successfully demonstrate the effectiveness of this approach by extracting lamellae from 100 nm length channel in arrayed carbon nanotube film field-effect transistors using FIB lift-out. Lay Description: In today's semiconductor industry, nanoscale and even atomic-scale investigation of the processing and product quality of nanodevices is essential, for which the combination of focused ion beam (FIB) and transmission electron microscope (TEM) is a commonly used tool. A key requirement is to ensure the TEM examined device components are precisely defined during the FIB process, which is becoming a challenge particularly for 100 nm scale (and beyond) nanodevices. In this study, the authors propose and further demonstrate a self-marked method that enables the feasibility of extracting sub-100 nm components of nanodevices (using the state-of-the art carbon nanotube transistor as a demo) using FIB, by continuously monitoring intermediate structures with secondary electron scanning electron microscopy (SE-SEM) imaging. This article is protected by copyright. All rights reserved.

Focusing Field Emission Arrays Constructed by Self-Aligned Photolithography

Subwavelength Focusing by a Micro/nanofiber Array.

Subwavelength Focusing by a Microsphere Array

Design, Fabrication and Characterization of Molybdenum Field Emitter Arrays (Mo-FEAs)

High-Density Gate Aperture Arrays For Mo-Feas Fabricated By Electron Beam Lithography

Fabrication of ZnO Nanowire Field-Emitter Arrays with Focusing Capability

Self-marked preparation of site-specific transmission electron microscope lamellae of nanodevices using focusing ion beam technique.

Fabrication of Coaxis-Gated ZnO Nanowire Field-Emitter Arrays With In-Plane Focusing Gate Electrode Structure

Fabrication of ZnO Nanowire Field Emitter Arrays with Self-Aligned Focus Electrode Structure

Sub-nanosecond Electron Emission from Electrically Gated Field Emitting Arrays

Self-focusing 3D lithography with varying refractive index polyethylene glycol diacrylate

Self-Aligned, Gated Bulk Molybdenum Field Emitter Arrays

Integration of ZnO Nanowires in Gated Field Emitter Arrays for Large-Area Vacuum Microelectronics Applications

Gas-Assisted Etching of Micro-Hole Lattice Array on Lithium Niobate with Focused Ion Beam

Nanofabrication of air-spaced field-plate gates with ultra-short footprint

Double-Gate-Driving Field Emission Display Panel with Stacked-Metalized-Aperture Structure

Fabrication of ZnO nanowire field emitter arrays with non-coplanar focus electrode structure

Faraday cage angled-etching of nanostructures in bulk dielectrics

Coplanar-gate ZnO Nanowire Field Emitter Arrays with Enhanced Gate-Control Performance Using a Ring-Shaped Cathode

Controllable Preparation of Fused Silica Micro Lens Array through Femtosecond Laser Penetration-Induced Modification Assisted Wet Etching

Combined Focused Electron Beam-Induced Deposition and Etching for the Patterning of Dense Lines without Interconnecting Material