Study on Fabrication Processing of Field Emitter Array

Chu Jiaru

2001-01-01

Abstract:The dry reative ion etching and wet strong alkali chemical etching to sharp the tips of field emitter array are studied. The methods to remove the SiO 2 insulator layer on the Si tips of field emitter array by RIE with different reactive gases or by wet chemical etching are discussed. The two methods are compared on their advantages and disadvatages.

What problem does this paper attempt to address?

Transmission of refractive microlens array by reactive ion beam etching

Qiao Xu,Liming Yang,Xiaowu Shu,Guoguang Yang

1998-01-01

Abstract:The results on the fabrication of refractive microlens array by hot forming and reactive ion beam etching were presented. Reactive ion beam etching is a novel dry etching technique for manufacturing micro-optical element with high etching rate and flexible etching ability. The principle of the method and the control of etching selectivity were described. The experiment for fabricating a refractive microlens array in the surface of silicon with the transmission of the array by reactive ion beam etching was reported.
Research on Fabrication of Silicon Field Emitter Arrays

LI Jian-jun,LIN Zu-lun,SHI Qing-xuan,CHEN Ze-xiang

DOI: https://doi.org/10.3969/j.issn.1006-6268.2006.10.010

2006-01-01

Abstract:This paper is mainly about the fabrication of field emitter arrays, In experiment 650nm SiO2 layer was thermally oxidized on a 4 inch n (100) single crystal silicon wafer, the 2um square and 6um pitch distance mask dots pattern by projection photolithography method, then emitter arrays was fabricated by RIE and wet etching process, during dry etching and oxide sharping process , a curve radius of 90nm emitter arrays were made ,In wet etching process also have a good result.
Fabrication of Field Emitter Array with Dry Etching

Wei Wei,Zhou Hongjun,Xu Xiangdong,Fu Shaojun,Wang Yong,Pei Yuanji

DOI: https://doi.org/10.3969/j.issn.1672-7126.2007.03.010

2007-01-01

Abstract:The gated silicon field emitter arrays(FEA) with small gate aperture have been successfully fabricated by dry etching,including ion beam etching(IBE) and reactive ion etching(RIE).Discussion focused on technological details.Silicon tips were rective-ion etched with SF6,whereas SiO2 materials were removed by RIE with a mixture of CF4 and H2.The gates were fabricated by IBE.
Study on the Fabrication of Field Emission Arrays Cathode

DONG Jian-kang,QI Kang-cheng,Li Xin-yi,GAO Feng

DOI: https://doi.org/10.3969/j.issn.1005-9490.2008.04.007

2008-01-01

Abstract:The field emission arrays with submicron gate apertures for low voltage operation have been successfully fabricated by modifying the conventional Spindt process.The insulator is formed by local oxidation of silicon,and the gate hole size is decreased due to the lateral encroachment of oxide.Then,the micron hole array is fabricated by wet etching method.Aluminum was deposited at a grazing angle to form a parting layer using the thermal evaporator.Molybdenum was deposited subsequently by the same machine,resulting in the formation of emitter cones on the Si substrate.Finally,by removing the parting layer selectively,molybdenum cone field emitter array is successfully fabricated.To improve the field electron emission of the emission arrays,the lanthanum hexaboride field emission cathode arrays is also fabricated by the same way.The emission characteristics of Mo cone cathode array and lanthanum hexaboride cone cathode array are tested.The results presented in this work have very significant effects in the further application of FEAs.
Field electron emission from ultra-high density Si nanotip arrays

kang zhao,Juncong She,jing zhou,Shaozhi Deng,Jun Chen,Ningsheng Xu

DOI: https://doi.org/10.1109/ivnc.2004.1355012

2004-01-01

Abstract:Earlier, welldeveloped techniques of reactive ion etching (insotropic) and wet chemical etching (anisotropic) in combination with oxidation sharpening were used for the fabrication of nanotip arrays for field electron emission applications. The fabrications require lithography technique to form masks for the following etching, and normally high temperature oxidation sharpening process is needed. In the present paper, we report a non-lithography and non-oxidation-sharpening method for ultra-high .&nsity Si nanotip arrays fabrication. In addition, novel processes were developed to obtain Si nanotip array with different coating materials on apex, i.e., Sic and amorphous Si (a-Si). Comparative studies were carried out on the field electron emission properties of the Si nanotip arrays with different coated layers.
Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si

Ke Sun,Wei Zhang,Biyun Li,Jae Young Lee,Ya-Hong Xie,Thomas Schroeder,Jens Katzer,Xinyu Wei,Thomas P. Russell

DOI: https://doi.org/10.1109/tnano.2012.2208472

2012-01-01

IEEE Transactions on Nanotechnology

Abstract:Sharpness of field emitter tips is one of the key factors to achieve excellent field emission performance. In order to sharpen the tips to atomic scale, a new method combining the bottom-up process of wafer-scale nanopattern formation via self-assembly of diblock copolymer with the top-down process of anisotropic etching of Si followed by nanocasting is developed. Geometrical hindrance in the oxidation of Si at nanometer scale is exploited to further sharpen the field emission tips.
Fabrication and characterization of Si nanotip arrays for Si-based nano-devices

Xiangao Zhang,Kui Liu,Kunji Chen,Jun Xu,Zhongyuan Ma,Wei Li,Ling Xu,XinFan Huang

DOI: https://doi.org/10.1117/12.792018

2008-01-01

Abstract:A simple and efficient technique for fabricating two-dimensional arrays of silicon nanotips by using electron beam lithography (EBL) and reactive ion etching (RIE) was reported. For the RIE processes, two kind of reactive gases, CHF3 and SF6, were used as plasma etching source for Si. The experiment results indicate that the reactive ion etching mechanism is different: the isotropic process for SF6 and anisotropic for CHF3. It is found that the mixed O-2/SF6 plasma etching can improve the properties of profile and surface of Si nanotips. Under the condition of ratio similar to 15%, the 10 nm top size of Si nanotips was obtained.
B13-P-03 Fabrication and Characterization of Silicon Field Emission Tips for Miniature Field Emission Electron Microscope

W.R. Lin,Y.J. Chuang,C.H. Lee,F.G. Tseng,F.R. Chen

DOI: https://doi.org/10.1093/jmicro/dfv238

2015-01-01

Microscopy

Abstract:In this study, we used MEMS (Microelectromechanical Systems) process to fabricate an array of field emission tips. It will be applicable to be used for miniature field emission gun scanning electron microscope. Integration the array tip with accelerating electrode and electrostatic lens to complete miniature field emission gun is in progress. Fabrication process of field emission device includes Si tips array and glass anode plate are given followed. First, Si tips array are formed mainly by RIE [ 1 ]. The effect of over-etched on the apex of Si tip is not evident. It has main effect on the shape and the uniformity of Si tips. The aspect ratio and the cone angle of apex can be modified by varying the pressure and the ratio of flow rate of etching gas and diluted gas. Second, different with the standard fabrication process of etched-gate Si tips array [ 2 ] [ 3 ], we design a fabrication process utilizing the wet etching by HF for glass anode plate. The distance from Si tip to glass anode plate can be modified by varying the etched depth in the fabrication process. In the end, experimental field emission device is constituted by the silicon tips and the glass anode plate. The results are analyzed by field emission theory to obtain field enhanced factor (β) and effective emission area (α).
Fabrication and field emission property of a Si nanotip array

G S Huang,X L Wu,Y C Cheng,X F Li,S H Luo,T Feng,Paul K Chu

DOI: https://doi.org/10.1088/0957-4484/17/22/008

IF: 3.5

2006-01-01

Nanotechnology

Abstract:Using a Si-based porous anodic alumina membrane as a mask, we demonstrate a way to pattern Si surface. After removing the SiO2 nanoislands formed during anodization of the Al/Si interface, we obtain a Si nanotip array on the surface of a Si wafer. This array shows an excellent field emission property with a low turn-on field of 8.5 V mu m(-1). The Fowler-Nordheim plot obtained is linearly dependent, indicating that the emission current arises from the quantum tunnelling effect. The Si nanotip array can be expected to have important applications in nanoelectronic devices.
A Systematic Study on Dry Etching Process of Germanium for Ge 3D-Fets Applications

Yanyan Zhang,Ran Cheng,Shun Xu,Rui Zhang,Yixin Zhao

DOI: https://doi.org/10.1109/icsict.2016.7998906

2016-01-01

Abstract:In this study, reactive-ion etching (RIE) of Ge in different ambient was systematically investigated. Several dominant parameters (applied power, gas flow rate and gas compositions) during the etching were considered to improve the profile of 3D Ge structures. Besides, it was experimentally confirmed that to obtain Ge sidewalls with small roughness and a large angle, adding O2 and an appropriate masking material are important. Finally, by optimizing the process parameters, Ge sidewalls with an angle near 80° and smooth surfaces were successfully achieved.
Field-Emission Properties of Nanostructured Wo3 Arrays Fabricated Using Tungsten Hot-Filament Chemical Vapor Deposition

Di Lu,Akihisa Ogino,Bo Liang,Jiabin Liu,Masaaki Nagatsu

DOI: https://doi.org/10.1143/jjap.48.090206

IF: 1.5

2009-01-01

Japanese Journal of Applied Physics

Abstract:Nanostructured WO3 arrays fabricated by tungsten hot-filament chemical vapor deposition in an oxygen/argon gas mixture were studied in order to develop field-emission materials. Nanostructured WO3 arrays of different shapes were grown by controlling the substrate temperature and the distance from the hot filament. We observed that their field-emission properties strongly depended on their tip structure. Numerical calculations of field enhancement factors for different tip geometries were carried out to explain the experimental results. The numerical result reveals that the planar tip structure may help nanostructured WO3 arrays exhibit better field-emission properties.
Study on Reactive Ion Etching of Silicon in Fabrication Process of Piezoelectric Microcantilever

DONG Lu,FANG Hua-bin,LIU Jing-quan,XU Dong,XU Zheng-yi,CAI Bing-chu

2006-01-01

Abstract:The process of a Si-based piezoelectric microcantilever was introduced.Especially,the technique of the reactive ion etching of silicon was studied emphatically.During etching of silicon,it was analyzed that the etching rate,uniformity and selectivity can be effectively improved by adjusting technological parameters properly,such as gas flow,RF power,working pressure,etc.The results indicate that the etching rate of Si can reach 401 nm/min and the non-uniformity on a 3″ wafer is controlled at±3.85% when the flow of SF6 is 20 mL/min,RF power is 20 W and the work pressure is 8.00 Pa.The research lay a well foundation for the fabrication of piezoelectric microcantilevers or other microstructures with functional thin film.
RIE of SiO_2 Nanoparticles and Its Application in Preparation of Silicon Nanopillar Array

Yu ZHAO,Xun JIANG,Cheng-yao LI,Wei WANG,Min GAO,Zhi-hong LI

DOI: https://doi.org/10.3969/j.issn.1672-6030.2009.06.007

2009-01-01

Abstract:Reactive ion etching (RIE) of SiO_2 nanoparticles on a silicon substrate has been systemically studied in this paper and a silicon nanopillar array has been prepared with this technique for field emission. A monolayer of SiO_2 nanoparticles was first obtained on a Si wafer by the revised evaporation approach. Then the Si wafer and the SiO_2 nanoparticles were etched by RIE anisotropically with a typical silicon oxide etching recipe. On the basis of analysis of the geometrical data of the shrunk nanoparticles in SEM images, the RIE process of the SiO_2 nanoparticles was modeled, and the horizontal and vertical etching rates were calculated based on the proposed geometrical model. Besides, a further etching of the silicon substrate after the nanoparticles brushed off led to a sharp silicon nanopillar array. Preliminary experiment result indicates that the so-prepared silicon nanopillar has good performance in field emission.
Stable Field Emission from Vertically Oriented SiC Nanoarrays

Jianfeng Xiao,Jiuzhou Zhao,Guanjiang Liu,Mattew Thomas Cole,Shenghan Zhou,Ke Chen,Xinchuan Liu,Zhenjun Li,Chi Li,Qing Dai

DOI: https://doi.org/10.3390/nano11113025

IF: 5.3

2021-11-11

Nanomaterials

Abstract:Silicon carbide (SiC) nanostructure is a type of promising field emitter due to high breakdown field strength, high thermal conductivity, low electron affinity, and high electron mobility. However, the fabrication of the SiC nanotips array is difficult due to its chemical inertness. Here we report a simple, industry-familiar reactive ion etching to fabricate well-aligned, vertically orientated SiC nanoarrays on 4H-SiC wafers. The as-synthesized nanoarrays had tapered base angles >60°, and were vertically oriented with a high packing density >107 mm−2 and high-aspect ratios of approximately 35. As a result of its high geometry uniformity—5% length variation and 10% diameter variation, the field emitter array showed typical turn-on fields of 4.3 V μm−1 and a high field-enhancement factor of ~1260. The 8 h current emission stability displayed a mean current fluctuation of 1.9 ± 1%, revealing excellent current emission stability. The as-synthesized emitters demonstrate competitive emission performance that highlights their potential in a variety of vacuum electronics applications. This study provides a new route to realizing scalable field electron emitter production.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Electro-chemical Etching Method for Single Crystal Lanthanum Hexaboride Field Emission Arrays

王小菊,林祖伦,祁康成,王本莲,蒋亚东

2008-01-01

High Power Laser and Particle Beams

Abstract:The fabrication of LaB6 field emission arrays is the key technology for manufacturing LaB6 field emission cathodes.Silicon nitride film was deposited as mask layer on the(111) single crystal LaB6 substrate by plasma-enhanced chemical vapor deposition method,and then patterned to form an array of 4 μm diameter silicon nitride disks by reactive ion etching method.Using these Si3N4 disks as hard masks,the underlying LaB6 was etched to form tip field emission arrays by electro-chemical etching method.The etching mechanism was discussed,and the sample morphologies were investigated by SEM as the etching conditions changed.The experimental results indicated that H3PO4 could overcome the anisotropic phenomenon usually occurred in previous electro-chemical etching experiments.The emitters would be higher with the increment of the H3PO4 concentration or anodization voltage,while the surfaces of emitters and substrate would be rougher.On the other hand,side-etching would occur when H3PO4 concentration was too low,which was not favorable for increasing the enhancement factor of field emitters.Further more,field emission properties of the fabricated LaB6-field emission arrays were measured using diode geometry at a base pressure of 2×10-4 Pa.When the anode plate was applied 900 V and placed 0.1 mm above the cathode,the emission current was 13 mA.
Controlled growth of SiC flexible field emitters with clear and sharp tips

shanliang chen,pengzhan ying,lin wang,fengmei gao,guodong wei,jinju zheng,zhipeng xie,weiyou yang

DOI: https://doi.org/10.1039/c3ra46982d

IF: 4.036

2014-01-01

RSC Advances

Abstract:With respect to the effect of local field enhancement, fabrication of nanostructures with clear and sharp tips is critically important for the exploration of field emitters with high performances. In the present work, aimed at the exploration of the flexible SiC field emitters with excellent properties, we report the controlled growth of quasialigned SiC nanoarrays with sharp tips via catalyst assisted pyrolysis of polymeric precursors on the carbon fabric substrates by tailoring the cooling rates. The resultant products are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). It is found that the growth of SiC quasialigned nanoneedle arrays with unique sharp tips could be achieved by reducing the cooling rates over the high-temperature pyrolysis process, enabling the capability for the controlled growth of SiC flexible field emitters on carbon fabric. The cooling rates are optimized, which suggests that 17.5 degrees C min(-1) is low enough to favor the growth of SiC nanowires with clear and sharp tips. The growth of the quasialigned SiC nanoarrays with sharp tips based on the typical VLS mechanism has been proposed. The FE property measurements suggest that the electron emission could be remarkably enhanced by tailoring the growth of SiC nanowires with clear and sharp tips.
Fabrication of LaB6 Tip Field Emission Arrays Using Electro-chemical Etching Method

WANG Xiao-ju,LIN Zu-lun,QI Kang-cheng,CHEN Ze-xiang,WANG Zhi-gang,JIANG Ya-dong

DOI: https://doi.org/10.3321/j.issn:1000-7032.2007.03.028

2007-01-01

Chinese Journal of Luminescence

Abstract:At present, field emitting cold cathode materials, including molybdenum, silicon, diamond carbon films, diamond-like carbon films and carbon nanotubes, are being developed. With each of these materials having their own shortages, it is important to seek some new field emitting cold cathode materials. Lanthanum hexaboride (LaB6) is a material with low work function, low resistivity, low sputtering yield, high melting point and high chemical stability. It has been widely used as thermionic emitters. On the other hand, LaB6 is also an excellent material for use as field emission cathodes. Some field emitting cold cathode single tips in-cluding LaB6, molybdenum, tungsten and tungsten rhenium were fabricated by using electro-chemical etching method. The electron emission characteristics of these cold cathodes were studied in a diode test cell in vacuum system. Changing the anode voltage at a pressure of 1×10-3 Pa, the current density of single crystal LaB6 was compared with other material cathodes. It showed that LaB6 was one kind of excellent materials to act as field emitting cold cathode, whose current density was much higher than any other materials. In addition, LaB6 field emission arrays were attempted to be fabricated by using electro-chemical etching method. The a-type si-licon layer was depositing by PECVD as mask. Electrolytes in this process were ethanol (CH3CH2OH) containing 2% hydrochloric acid (HCl) and the electrolytic current was 0.6 mA. The SEM showed that the substrate and surface of single crystal LaB6 tips were both smooth. The height of LaB6 tips was about 1.7 μm. The uniformity of the tips was fine, while due to the erosion selectivity for different crystalloid surface in electro-chemical etching method, serious anisotropic phenomenon was observed for LaB6 tips. It demonstrated that, seeking some new electrolytes or using other special dry etching methods instead of wet etching methods, maybe effective to fabricate excellent LaB6 field emitting cold cathode tips. These experimental conclusions were constructive to direct the application of LaB6 to field emission cathodes further.
Electron Field Emission Characteristics from Single-crystal Silicon Nanoarrays Fabricated by Direct Lithography with Nanosphere Mask

周江,李卫,张贤高,徐骏,徐岭,李伟,陈坤基

2008-01-01

Chinese Journal of Luminescence

Abstract:The preparation and characteristics of silicon nanoarrays is now an attractive areas of research. At present,most research focused on the optical and electrical properties and applications,and less field emission characteristics,as a mature technology of silicon planar support, silicon field emission cathode materials are easily compatible with the microelectronic integrated circuits, and so they have a broad application prospects.We present the fabrication of large-scale two dimensional periodic silicon nanoarrays using nanosphere lithography,and the field emission characteristics have been studied. The fabrication process includes following steps: first the crystalline silicon substrate was coated with a monolayer of self polystyrene (PS) spheres of 220 nm in diameter, then the sample was etched by reactive ion etching to produce silicon nanoarrays. AFM images of the nanoarrays show that the tips stand 60～70 nm high and the area density can achieve 6×109/cm2. All field emission measurements were performed at a vacuum of 1.0×10-4 Pa or better. Expected to improve the field emission characteristics, about 60 nm thickness of a amorphous carbon film was deposited on top of the silicon nanoarrays by plasma-enhanced chemical vapour deposition. Field emission results show that compared to silicon nanoarrays, silicon nanoarrays coated with a thin a-C film effectively lower the threshold fields, approximately 8.1 V/μm, while field enhancement factor increased. When the electric field intensity reached 20 V/μm, the current density can reach about 1.4 mA/cm2. The improvement of field emission originates from the anisotropic structure of the films,when conductive sp2 clusters embedded in an insulating sp3 matrix,the electric field has been enhanced.
Fabrication of Nano-Aperture Hollow Tip Array for Microplasma Etching

Weiwei Xiang,Li Wen,Qiuping Zhang,Jiaru Chu

DOI: https://doi.org/10.4028/www.scientific.net/kem.483.89

2011-01-01

Key Engineering Materials

Abstract:In parallel microplasma etching system, microplasmas are generated in the hollow pyramidal tips array and extracted through the nano-apertures at the tips for maskless locally etching. In this paper, SiO2 hollow pyramidal tips array and nano-apertures of 50~200nm diameters at the tips are successfully fabricated using a low temperature nonuniform thermal oxidation and selective wet etching on a silicon wafer with high efficiency and low cost. Key issues such as the factors influencing the tip shape and quality, nonuniform oxidation phenomenon, releasing of hollow tips array with high width-thickness ratio (hollow pyramidal tip base width/sidewall thickness) and nano-aperture etching are presented and analyzed in detail. The results of this paper may lay a good foundation for ongoing experiments of parallel microplasma maskless etching.
Design, Fabrication and Characterization of Molybdenum Field Emitter Arrays (Mo-FEAs)

Ningli Zhu,Jing Chen

DOI: https://doi.org/10.3390/mi8050162

IF: 3.4

2017-01-01

Micromachines

Abstract:We report on the fabrication of highly uniform field emitter arrays (FEAs) with an integrated self-aligned extraction gate from bulk molybdenum. All critical dimensions of the emitter tip were determined by a single process step of Inductively Coupled Plasma (ICP) etching. In addition, the height difference between the emitter tip and the gate plane was controlled by the thickness of the SiO2 dielectric layer. A 10 mu m gate aperture molybdenum-FEAs (Mo-FEAs) at a typical 20 mu m pitch with 6 mu m height was achieved with 8.4 mA/cm(2) current density at gate voltages of 110 V and the turn-on field of 1.4 V/mu m. These self-aligned Mo-FEAs could be expanded to active larger areas to increase the emission current.

Study on Fabrication Processing of Field Emitter Array

Transmission of refractive microlens array by reactive ion beam etching

Research on Fabrication of Silicon Field Emitter Arrays

Fabrication of Field Emitter Array with Dry Etching

Study on the Fabrication of Field Emission Arrays Cathode

Field electron emission from ultra-high density Si nanotip arrays

Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si

Fabrication and characterization of Si nanotip arrays for Si-based nano-devices

B13-P-03 Fabrication and Characterization of Silicon Field Emission Tips for Miniature Field Emission Electron Microscope

Fabrication and field emission property of a Si nanotip array

A Systematic Study on Dry Etching Process of Germanium for Ge 3D-Fets Applications

Field-Emission Properties of Nanostructured Wo3 Arrays Fabricated Using Tungsten Hot-Filament Chemical Vapor Deposition

Study on Reactive Ion Etching of Silicon in Fabrication Process of Piezoelectric Microcantilever

RIE of SiO_2 Nanoparticles and Its Application in Preparation of Silicon Nanopillar Array

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Electro-chemical Etching Method for Single Crystal Lanthanum Hexaboride Field Emission Arrays

Controlled growth of SiC flexible field emitters with clear and sharp tips

Fabrication of LaB6 Tip Field Emission Arrays Using Electro-chemical Etching Method

Electron Field Emission Characteristics from Single-crystal Silicon Nanoarrays Fabricated by Direct Lithography with Nanosphere Mask

Fabrication of Nano-Aperture Hollow Tip Array for Microplasma Etching

Design, Fabrication and Characterization of Molybdenum Field Emitter Arrays (Mo-FEAs)