Electro-chemical Etching Method for Single Crystal Lanthanum Hexaboride Field Emission Arrays

王小菊,林祖伦,祁康成,王本莲,蒋亚东

2008-01-01

High Power Laser and Particle Beams

Abstract:The fabrication of LaB6 field emission arrays is the key technology for manufacturing LaB6 field emission cathodes.Silicon nitride film was deposited as mask layer on the(111) single crystal LaB6 substrate by plasma-enhanced chemical vapor deposition method,and then patterned to form an array of 4 μm diameter silicon nitride disks by reactive ion etching method.Using these Si3N4 disks as hard masks,the underlying LaB6 was etched to form tip field emission arrays by electro-chemical etching method.The etching mechanism was discussed,and the sample morphologies were investigated by SEM as the etching conditions changed.The experimental results indicated that H3PO4 could overcome the anisotropic phenomenon usually occurred in previous electro-chemical etching experiments.The emitters would be higher with the increment of the H3PO4 concentration or anodization voltage,while the surfaces of emitters and substrate would be rougher.On the other hand,side-etching would occur when H3PO4 concentration was too low,which was not favorable for increasing the enhancement factor of field emitters.Further more,field emission properties of the fabricated LaB6-field emission arrays were measured using diode geometry at a base pressure of 2×10-4 Pa.When the anode plate was applied 900 V and placed 0.1 mm above the cathode,the emission current was 13 mA.