Abstract:International Journal of Modern Physics B, Ahead of Print. A simple approach dealing with thermal oxidation at atmospheric pressure was used to synthesize copper oxide nanowires (CuO-NWs) on copper substrate. The vertically oriented CuO-NWs were used for further subjected to deposition of ultrathin layer (∼20[math]nm) of lanthanum hexaboride (LaB[math] using the electron beam evaporation technique. The observation of the characteristic vibrational mode of LaB6 in the Raman spectrum of LaB6-coated CuO-NWs (LaB6@CuO-NWs) revealed the existence of LaB6 in the deposited sample. Furthermore, confirmation of LaB6 coating on CuO-NWs was corroborated by X-ray photoelectron spectroscopy (XPS) analysis. The field electron emission (FEE) characteristics of pristine CuO-NWs and LaB6@CuO-NWs were investigated in a planer diode geometry at a base pressure of [math][math]mbar. The values of turn-on and threshold fields (defined at emission current density of 1 and 10[math][math]A/cm2, respectively) were found to be 5.4[math]V/[math]m and 1.6[math]V/[math]m (for pristine CuO-NWs emitter) and 6.75, and 2.85[math]V/[math]m (for LaB6@CuO-NWs emitter). Interestingly, a noticeably large emission current density of [math][math][math]A/cm2 has been extracted from the LaB6@CuO-NWs emitter at a relatively lower applied field of 5.8[math]V/[math]m. The Fowler–Nordheim (FN) plots of both the emitters showed nonlinear behavior, indicative of their semiconductive nature. Furthermore, both the emitters showed relatively stable emission behavior tested at a pre-set value of 1[math][math]A more than 3[math]h. The enhanced FEE behavior of LaB6@CuO-NWs emitter is attributed to the modulation of electronic properties due to LaB6-CuO interface-induced effects. Although the promising FEE behavior of LaB6@CuO-NWs emitter warrants its potential for practical applications, further improvement can be achieved via fabricating an array emitter due to CuO NWS and optimizing the thickness of LaB6 coating.

Fabrication of Lanthanum Hexaboride Single Nanowire Field Emitter and Their Field Emission Properties

LaB6 Nanowires and Their Field Emission Properties

Nanostructured LaB6 field emitter with lowest apical work function.

Electronic Structures and Properties of Lanthanide Hexaboride Nanowires

An ultrabright and monochromatic electron point source made of a LaB 6 nanowire

A moderate synthesis route of 5.6 mA-current LaB6 nanowire film with recoverable emission performance towards cold cathode electron source applications

Ultrabright and monochromatic nanowire electron sources

Improved field electron emission behavior of ultrathin lanthanum hexaboride-coated copper oxide nanowires

Single-Crystalline GdB6 Nanowire Field Emitters

Fabrication of Carbon Nanotube Lateral Field Emitters

Field Emission Behaviors of B/Lab6 Hierarchical Heterojunction Nanostructures

High-endurance Micro-Engineered LaB6 Nanowire Electron Source for High-Resolution Electron Microscopy

Probing Field Emission from Boron Carbide Nanowires

Hot electron field emission via individually transistor-ballasted carbon nanotube arrays.

Field Emission From Short And Stubby Vertically Aligned Carbon Nanotubes

Field Emission from Single-Crystalline Hfc Nanowires

Field-Emission Properties of Nanostructured Wo3 Arrays Fabricated Using Tungsten Hot-Filament Chemical Vapor Deposition

Lab6 Tip-Modified Multiwalled Carbon Nanotube As High Quality Field Emission Electron Source

Fabrication and field emission properties of boron nanowire bundles.

Stable, Self-Ballasting Field Emission from Zinc Oxide Nanowires Grown on an Array of Vertically Aligned Carbon Nanofibers

Lateral Field Emitters Fabricated Using Carbon Nanotubes