Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

Single-Crystalline GdB6 Nanowire Field Emitters

Fabrication of Lanthanum Hexaboride Single Nanowire Field Emitter and Their Field Emission Properties

LaB6 Nanowires and Their Field Emission Properties

Nanostructured LaB6 field emitter with lowest apical work function.

Single-Crystal Line Ceb6 Nanowires

Crystallinity-Controlled Germanium Nanowire Arrays: Potential Field Emitters

Field Emission from Single-Crystalline Hfc Nanowires

Femtosecond laser processing and field emission properties of the FEAs on single crystal GdB6 (100) surface

Stable, Self-Ballasting Field Emission from Zinc Oxide Nanowires Grown on an Array of Vertically Aligned Carbon Nanofibers

Stable Field Emission from Single-Crystalline Zirconium Carbide Nanowires

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Field Emission From Crystalline Copper Sulphide Nanowire Arrays

Synthesis of Boron and Boride Compounds Nanowire Arrays by Chemical Vapor Deposition

Three-dimensional Branched SiC Nanowire Field Emitters with Single-Crystal Integrated Structures and Increased Emission Sites: Ultralow Turn-on Field and High Stability

On-nanowire Spatial Band Gap Design for White Light Emission.

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Electronic Structures and Properties of Lanthanide Hexaboride Nanowires

Field Emission and Optical Properties of Ga-doped ZnO Nanowires Synthesized Via Thermal Evaporation

Probing Field Emission from Boron Carbide Nanowires

Single Crystalline SmB6 Nanostructure Arrays: Controllable Synthesis and Field Emission Property

Enhanced Electron Field Emission in B-doped Carbon Nanotubes