Field Emission Characteristics of Lanthanum Hexaboride Coated Silicon Field Emitters

Xiaoju Wang,Zulun Lin,Kangcheng Qi,Zexiang Chen,Zhigang Wang,Yadong Jiang
DOI: https://doi.org/10.1088/0022-3727/40/16/006
2007-01-01
Journal of Physics D Applied Physics
Abstract:Lanthanum hexaboride(LaB6) films have been deposited on silicon tip field emitters by electron-beam evaporation. The field emission characteristics are studied in a diode test cell in a vacuum system. The experimental results show that the field emission stability of the LaB6-coated Si-tip FEA can be improved and the emission current is significantly enhanced to 75 mu A, in contrast to pure Si-tip FEA of 500 nA and Mo-coated Si-tip FEA of 300 nA with 1500V applied to the anode. Furthermore, even at low vacuum (> 1.5 x 10(-5) Torr) it still exhibits good emission properties and strong ability to withstand ion bombardment. This LaB6-coated Si-tip FEA is an excellent electronic candidate, in particular a fit for travelling-wave tubes, klystrons and other large vacuum apparatus.
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