Abstract:International Journal of Modern Physics B, Ahead of Print. A simple approach dealing with thermal oxidation at atmospheric pressure was used to synthesize copper oxide nanowires (CuO-NWs) on copper substrate. The vertically oriented CuO-NWs were used for further subjected to deposition of ultrathin layer (∼20[math]nm) of lanthanum hexaboride (LaB[math] using the electron beam evaporation technique. The observation of the characteristic vibrational mode of LaB6 in the Raman spectrum of LaB6-coated CuO-NWs (LaB6@CuO-NWs) revealed the existence of LaB6 in the deposited sample. Furthermore, confirmation of LaB6 coating on CuO-NWs was corroborated by X-ray photoelectron spectroscopy (XPS) analysis. The field electron emission (FEE) characteristics of pristine CuO-NWs and LaB6@CuO-NWs were investigated in a planer diode geometry at a base pressure of [math][math]mbar. The values of turn-on and threshold fields (defined at emission current density of 1 and 10[math][math]A/cm2, respectively) were found to be 5.4[math]V/[math]m and 1.6[math]V/[math]m (for pristine CuO-NWs emitter) and 6.75, and 2.85[math]V/[math]m (for LaB6@CuO-NWs emitter). Interestingly, a noticeably large emission current density of [math][math][math]A/cm2 has been extracted from the LaB6@CuO-NWs emitter at a relatively lower applied field of 5.8[math]V/[math]m. The Fowler–Nordheim (FN) plots of both the emitters showed nonlinear behavior, indicative of their semiconductive nature. Furthermore, both the emitters showed relatively stable emission behavior tested at a pre-set value of 1[math][math]A more than 3[math]h. The enhanced FEE behavior of LaB6@CuO-NWs emitter is attributed to the modulation of electronic properties due to LaB6-CuO interface-induced effects. Although the promising FEE behavior of LaB6@CuO-NWs emitter warrants its potential for practical applications, further improvement can be achieved via fabricating an array emitter due to CuO NWS and optimizing the thickness of LaB6 coating.

Fabrication and Field Emission Characteristics of LaB6 Field-Emitter Arrays

Fabrication of Lanthanum Hexaboride Single Nanowire Field Emitter and Their Field Emission Properties

Improved field electron emission behavior of ultrathin lanthanum hexaboride-coated copper oxide nanowires

Field Emission Behaviors of B/Lab6 Hierarchical Heterojunction Nanostructures

Nanostructured LaB6 field emitter with lowest apical work function.

Fabrication of polycrystalline LaB6 tips array by femtosecond laser and its field emission performance

Precisely-controlled Fabrication of Single ZnO Nanoemitter Arrays and Their Possible Application in Low Energy Parallel Electron Beam Exposure.

Effect of Surface O2 Adsorption on the Field Emission Performances of LaB6 Nanowires

LaB6 Nanowires and Their Field Emission Properties

Field-Emission Properties of Nanostructured Wo3 Arrays Fabricated Using Tungsten Hot-Filament Chemical Vapor Deposition

A moderate synthesis route of 5.6 mA-current LaB6 nanowire film with recoverable emission performance towards cold cathode electron source applications

Effect Of Surface O-2 Adsorption On The Field Emission Performances Of Lab6 Nanowires

Femtosecond laser processing and field emission properties of the FEAs on single crystal GdB6 (100) surface

Boron trace amount measurement in LaB6 hollow cathode discharge using an improved actinometry method based on OES

Fabrication of Single Crystalline Smb6 Nanocone Arrays and Investigation of Their Field Emission Properties

Fabrication of Carbon Nanotube Lateral Field Emitters

Lateral Field Emitters Fabricated Using Carbon Nanotubes

Ultra-Low Threshold Field Emission from Amorphous Bn Nanofilms

Design, Fabrication and Characterization of Molybdenum Field Emitter Arrays (Mo-FEAs)

Work Function Trends and New Low Work Function Boride and Nitride Materials for Electron Emission Applications

Electrical and thermal characteristics of LaB6 thermionic hollow cathodes operating in He, D2, Ar, and Xe at 4–200 Pa and 0.25–5 A cm−2