Abstract:The preparation and characteristics of silicon nanoarrays is now an attractive areas of research. At present,most research focused on the optical and electrical properties and applications,and less field emission characteristics,as a mature technology of silicon planar support, silicon field emission cathode materials are easily compatible with the microelectronic integrated circuits, and so they have a broad application prospects.We present the fabrication of large-scale two dimensional periodic silicon nanoarrays using nanosphere lithography,and the field emission characteristics have been studied. The fabrication process includes following steps: first the crystalline silicon substrate was coated with a monolayer of self polystyrene (PS) spheres of 220 nm in diameter, then the sample was etched by reactive ion etching to produce silicon nanoarrays. AFM images of the nanoarrays show that the tips stand 60～70 nm high and the area density can achieve 6×109/cm2. All field emission measurements were performed at a vacuum of 1.0×10-4 Pa or better. Expected to improve the field emission characteristics, about 60 nm thickness of a amorphous carbon film was deposited on top of the silicon nanoarrays by plasma-enhanced chemical vapour deposition. Field emission results show that compared to silicon nanoarrays, silicon nanoarrays coated with a thin a-C film effectively lower the threshold fields, approximately 8.1 V/μm, while field enhancement factor increased. When the electric field intensity reached 20 V/μm, the current density can reach about 1.4 mA/cm2. The improvement of field emission originates from the anisotropic structure of the films,when conductive sp2 clusters embedded in an insulating sp3 matrix,the electric field has been enhanced.

Fabrication and characterization of Si nanotip arrays for Si-based nano-devices

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Field electron emission from ultra-high density Si nanotip arrays

Fabrication and field emission property of a Si nanotip array

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Fabrication of Silicon Nanopore Arrays Using A Combination of Dry and Wet Etching

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RIE of SiO_2 Nanoparticles and Its Application in Preparation of Silicon Nanopillar Array

Hybrid Metal-Insulator-metal Structures on Si Nanowires Array for Surface Enhanced Raman Scattering

AFM Tip-Based Fabrication of Silicon Nanostructures with Reduced Subsurface Amorphous Layers

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Nanofabrication of Sic Templates for Direct Hot Embossing for Metallic Photonic Structures and Meta Materials

B13-P-03 Fabrication and Characterization of Silicon Field Emission Tips for Miniature Field Emission Electron Microscope

Fabrication of High-Aspect-ratio Silicon Nanopillar Arrays with the Conventional Reactive Ion Etching Technique

Fast Patterning and Dry-Etch of SiNxfor High Resolution Nanoimprint Templates

Fabrication of the Highly Ordered Silicon Nanocone Array With Sub-5 nm Tip Apex by Tapered Silicon Oxide Mask

Electron Field Emission Characteristics from Single-crystal Silicon Nanoarrays Fabricated by Direct Lithography with Nanosphere Mask

Fabrication and Properties of Large-Area Silicon Nanowire Arrays

Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing

Morphology Control and Electron Field Emission Properties of High-Ordered Si Nanoarrays Fabricated by Modified Nanosphere Lithography

Fabrication of Nanopore and Nanopore Arrays in Si Substrate by Wet Etching Method at Wafer Scale