RIE of SiO_2 Nanoparticles and Its Application in Preparation of Silicon Nanopillar Array

Yu ZHAO,Xun JIANG,Cheng-yao LI,Wei WANG,Min GAO,Zhi-hong LI
DOI: https://doi.org/10.3969/j.issn.1672-6030.2009.06.007
2009-01-01
Abstract:Reactive ion etching (RIE) of SiO_2 nanoparticles on a silicon substrate has been systemically studied in this paper and a silicon nanopillar array has been prepared with this technique for field emission. A monolayer of SiO_2 nanoparticles was first obtained on a Si wafer by the revised evaporation approach. Then the Si wafer and the SiO_2 nanoparticles were etched by RIE anisotropically with a typical silicon oxide etching recipe. On the basis of analysis of the geometrical data of the shrunk nanoparticles in SEM images, the RIE process of the SiO_2 nanoparticles was modeled, and the horizontal and vertical etching rates were calculated based on the proposed geometrical model. Besides, a further etching of the silicon substrate after the nanoparticles brushed off led to a sharp silicon nanopillar array. Preliminary experiment result indicates that the so-prepared silicon nanopillar has good performance in field emission.
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