Abstract:The ability to create antireflective super-omniphobic surfaces is important for various optoelectronic applications, which is still a challenge. The combination design of sub-wavelength nanoscale structures for antireflection and re-entrant structures for super-omniphobicity is an effective way to obtain super-omniphobicity and antireflection simultaneously. However, due to the inclination of droplets to strike to the bottom and the complicated craftsmanship, obtaining efficient nanoscale re-entrant super-omniphobic surfaces is difficult, which limits the compatibility of antireflection and super-omniphobicity. Herein, disordered nanoscale T-shape pillars are utilized to obtain the broadband antireflection, non-iridescence, and super-omniphobicity. A simple and repetitive method is reported for large-area scalable fabrication of disordered nanoscale T-shape pillars on glass based on a maskless phase separation lithographic approach. The kinetic roles of Laplace pressure, viscous force, and saturated vapor pressure in the super-omniphobicity are demonstrated by investigating the effect of feature size, interval, area fraction and pillar height of the T-shape nanopillars, liquid surface tension, viscosity, etc. The effects of feature size, interval, and height on the antireflection and the optical behavior on the T-shape nanopillars are also investigated. Although the cap of T-shape nanopillars could bring scattering loss when light touches on the cap range with a large incident angle, broadband antireflection is still obtained. As a demonstration, T-shape nanopillars exhibiting super-omniphobicity (static water contact angle of 160 +/- 1.0 degrees and ethyl alcohol contact angle of 162 +/- 0.5 degrees), high transparency (94%), broadband antireflection (347-780 nm), and non-iridescence are obtained. Our proposed method provides a simple, rapid, and low-cost process to explore the ability of nanoscale re-entrant structures for compatibility of broadband antireflection and super-omniphobicity, with promising practical application in self-cleaning optoelectronic surfaces.

Study on Silicon Nanopillars with Ultralow Broadband Reflectivity Via Maskless Reactive Ion Etching at Room Temperature

Hexagonal Arrays Of Round-Head Silicon Nanopillars For Surface Anti-Reflection Applications

Fabrication of Submicrometer Inp Pillars by Colloidal Lithography and Dry Etching

Fabrication of Large Area Subwavelength Antireflection Structures on Si Using Trilayer Resist Nanoimprint Lithography and Liftoff

Reflectivity of porous-pyramids structured silicon surface

Ultralow Broadband Reflectivity in Black Silicon Via Synergy Between Hierarchical Texture and Specific‐Size Au Nanoparticles

Fabrication of High-Aspect-ratio Silicon Nanopillar Arrays with the Conventional Reactive Ion Etching Technique

A route to engineered high aspect-ratio silicon nanostructures through regenerative secondary mask lithography

Scalable Nanofabrication of T-Shape Nanopillars Based on Polystyrene/Polyphenylsilsequioxane Films Showing Broadband Antireflection and Super-omniphobicity

Fabrication and Characterization of Inverted Silicon Pyramidal Arrays with Randomly Distributed Nanoholes

Tuning the peak position of subwavelength silica nanosphere broadband antireflection coatings.

Ultra-Low-Reflective, Self-Cleaning Surface by Fabrication Dual-Scale Hierarchical Optical Structures on Silicon

Low Reflectance Gaas Nano-Cones Fabricated By Colloidal Lithography For Solar Cells

Durable Broadband and Omnidirectional Ultra-antireflective Surfaces

Tunable Antireflection Properties with Self-Assembled Nanopillar and Nanohole Structure

Fabrication of Anti-reflecting Si Nano-structures with Low Aspect Ratio by Nano-sphere Lithography Technique

Optimization of Porous Silicon Structure As Antireflective Material

Broadband anti-reflection coating for Si solar cell applications based on periodic Si nanopillar dimer arrays & Si 3 N 4 layer

Biomimetic corrugated silicon nanocone arrays for self-cleaning antireflection coatings

Wafer Scale Fabrication of Dense and High Aspect Ratio Sub-50 Nm Nanopillars from Phase Separation of Cross-Linkable Polysiloxane/Polystyrene Blend

Design of High-Quality Reflectors for Vertical Nanowire Lasers on Si