Fabrication of Large Area Subwavelength Antireflection Structures on Si Using Trilayer Resist Nanoimprint Lithography and Liftoff
ZN Yu,H Gao,W Wu,HX Ge,SY Chou
DOI: https://doi.org/10.1116/1.1619958
2003-01-01
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
Abstract:In this article we report on the fabrication of subwavelength antireflection structures on silicon substrates using a trilayer resist nanoimprint lithography and liftoff process. We have fabricated cone-shaped nanoscale silicon pillars with a continuous effective index gradient, which greatly enhances its antireflective performances. Our measurements show that the two-dimensional subwavelength structure effectively suppresses surface reflection over a wide spectral bandwidth and a large field of view. A reflectivity of 0.3% was measured at 632.8 nm wavelength, which is less than 1% of the flat silicon surface reflectivity.
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