Abstract:Engineering fast and reliable nanostructures with small feature size from the self‐assembly of giant surfactants is appealing in next‐generation lithography. Herein, well‐defined line nanopatterns with sub 10 nm feature size can be fabricated via directed self‐assembly of PS‐b‐oDMS7POSS, giving small feature size from self‐assembly and excellent etching contrast for reactive ion etching to create topographic nanopatterns for aimed lithographic applications. This work pioneers to combine fast self‐assembly of polyhedral oligomeric silsesquioxanes (POSS) nanocage‐based giant surfactants with high etching contrast and directed self‐assembly for reliable long‐range lateral order to create well‐aligned sub‐10 nm line nanopatterns via reactive ion etching (RIE). Polystyrene‐block‐oligo(dimethylsiloxane) substituted POSS (PS‐b‐oDMS7POSS) with seven oligo(dimethylsiloxane) at the corners of the POSS nanocage and one polystyrene (PS) tail is designed and synthesized as a giant surfactant with self‐assembly behaviors like block copolymer (BCP). In contrast to BCP, oDMS7POSS gives a volume‐persistent "nanoatom" particle with higher mobility for fast self‐assembly and higher segregation strength with PS for smaller feature size. By taking advantage of directed self‐assembly using nano‐trench fabricated by electron beam lithography, well‐ordered nanostructured monolayer with well‐aligned parallel oDMS7POSS cylinders can be formed by confined self‐assembly within the nano‐trench. With the optimization of the RIE treatment using O2 as an etchant, the high etching contrast from the oDMS7POSS and PS gives the formation of well‐defined line nanopatterns with sub‐10 nm critical dimension that can serve as a mask for pattern transfer in lithography. These results demonstrate a cost‐effective approach for nanopatterning by utilizing a creatively designed giant surfactant with sub‐10 nm feature size and excellent etching contrast for modern lithographic applications.

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Self-Formed High-Aspect-Ratio Polymer Nanopillars by RIE

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Self-masked high-aspect-ratio polymer nanopillars.

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Fabrication of Nanoporous Silicon Dioxide/silicon Nitride Membranes Using Etched Ion Track Technique

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Fabrication of Nanostructures on Si Surface Using Gold Nanoparticle Mask

RIE of SiO_2 Nanoparticles and Its Application in Preparation of Silicon Nanopillar Array

Unconventional Lithography for Patterned Nanomaterials

Versatile Approach of Silicon Nanofabrication without Resists: Helium Ion-Bombardment Enhanced Etching

Development of Reactive-Ion Etching for ZnO-Based Nanodevices

Fabrication of High-Aspect-ratio Silicon Nanopillar Arrays with the Conventional Reactive Ion Etching Technique

Fabrication of silicon-based multilevel nanostructures via scanning probe oxidation and anisotropic wet etching

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High molecular weight block copolymer lithography for nanofabrication of hard mask and photonic nanostructures