Abstract:Structuring Si in arrays of vertical high aspect ratio pillars, ranging from nanoscale to macroscale feature dimensions, is essential for producing functional interfaces for many applications. Arrays of silicon 3D nanostructures are needed to realize photonic and phononic crystals, waveguides, metalenses, X-ray wavefront sensors, detectors, microstructures and arrays of Si pillars are used as bio-interfaces in neural activity recording, cell culture, microfluidics, sensing and on-chip manipulation. Here, we present a new strategy for realizing arrays of protruding sharp Si nanopillars using displacement Talbot lithography combined with metal-assisted chemical etching (MacEtch) in gas phase. With the double exposure of a linear grating mask in orthogonal orientations and the lift-off technique, we realized a catalyst pattern of holes in a Pt thin film with a period of 1 {\mu}m and hole diameter in the range of 100-250 nm. MacEtch in gas phase by using vapor HF and oxygen from air allows to etch arrays of protruding Si nanopillars 200 nm-thick and aspect ratio in the range of 200 (pillar height/width) with an etching rate up to 1 {\mu}m/min. With the advantage of no stiction, no ion beam damage of the Si substrate, nanometric resolution and high fidelity of pattern transfer the method is an easy-to-scale-up processing that can support the fabrication of Si pillars arrays for many valuable applications both at micro and nano-scale.

Fabrication of 10-nm Si pillars with self-formed etching masks

Fabrication of Submicrometer Inp Pillars by Colloidal Lithography and Dry Etching

Fabrication Of Silicon Cones And Pillars Using Rough Metal Films As Plasma Etching Masks

Fabrication of Size-Controlled 10-Nm Scale Si Pillars Using Metal Clusters As Formation Nuclei

Formation of 10 Nm Si Structures Using Size-Selected Metal Clusters

Graphene Masks As Passivation Layers in the Electrochemical Etching of Silicon

Fabrication of ordered arrays of silicon nanopillars in silicon-on-insulator wafers

Fabrication of Nanostructures on Si Surface Using Gold Nanoparticle Mask

Fabrication of Nanopillars Based on Silicon Oxide Nanopatterns Synthesized in Oxygen Plasma Removal of Photoresist

Fabrication of High-Aspect-ratio Silicon Nanopillar Arrays with the Conventional Reactive Ion Etching Technique

Size and Morphology Control of Highly-Ordered Nano-Silicon Pillar Fabricated by Direct Nanosphere Lithography

The Preparation Of Self-Formed Pdms Nanostructures By Rie Etching

Versatile Approach of Silicon Nanofabrication without Resists: Helium Ion-Bombardment Enhanced Etching

Fabricating 3D Si nanostructure via a novel Ga+ implantation enabled maskless dry etching process

Fabrication of large-scale periodic silicon nanopillar arrays for 2D nanomold using modified nanosphere lithography☆

High aspect ratio arrays of Si nano-pillars using displacement Talbot lithography and gas-MacEtch

Deposition of Size-Selected Clusters and Application in Silicon Nanofabrication

Fabrication of Ordered Arrays of Silicon Nanopillars at Selected Sites

Fabrication of Silicon Hierarchical Nanopillar Arrays Based on Nanosphere Lithography

Fabrication of Nanoporous Silicon Dioxide/silicon Nitride Membranes Using Etched Ion Track Technique

Fabrication of the Highly Ordered Silicon Nanocone Array With Sub-5 nm Tip Apex by Tapered Silicon Oxide Mask