Abstract:Silicon nanostructuring imparts unique material properties including antireflectivity, antifogging, anti-icing, self-cleaning, and/or antimicrobial activity. To tune these properties however, a good control over features size and shape is essential. Here, a versatile fabrication process is presented to achieve tailored silicon nanostructures (thin/thick pillars, sharp/truncated/re-entrant cones), of pitch down to ~50 nm, and high-aspect ratio (>10). The approach relies on pre-assembled block copolymer (BCP) micelles and their direct transfer into a glass hard mask of an arbitrary thickness, now enabled by our recently reported regenerative secondary mask lithography. During this pattern transfer, not only the mask diameter can be decreased but also uniquely increased; constituting the first method to achieve such tunability without necessitating a different molecular weight BCP. Consequently, the hard mask modulation (height, diameter) advances the flexibility in attainable inter-pillar spacing, aspect ratios, and re-entrant profiles (= glass on silicon). Combined with adjusted silicon etch conditions, the morphology of nanopatterns can be highly customized. The process control and scalability enable uniform patterning of a 6-inch wafer which is verified through cross-wafer excellent antireflectivity (<5%) and water-repellency (advancing contact angle 158°; hysteresis 1°). It is envisioned the implementation of this approach to silicon nanostructuring to be far-reaching, facilitating fundamental studies and targeting applications spanning solar panels, antifogging/antibacterial surfaces, sensing, amongst many others.

Fabrication Of Silicon Cones And Pillars Using Rough Metal Films As Plasma Etching Masks

Fabrication of Submicrometer Inp Pillars by Colloidal Lithography and Dry Etching

Fabrication of 10-nm Si pillars with self-formed etching masks

Fabrication of ordered arrays of silicon nanopillars in silicon-on-insulator wafers

Fabrication of Size-Controlled 10-Nm Scale Si Pillars Using Metal Clusters As Formation Nuclei

Fabrication of the Highly Ordered Silicon Nanocone Array With Sub-5 nm Tip Apex by Tapered Silicon Oxide Mask

Fabrication of High-Aspect-ratio Silicon Nanopillar Arrays with the Conventional Reactive Ion Etching Technique

Fabrication of Nanopillars Based on Silicon Oxide Nanopatterns Synthesized in Oxygen Plasma Removal of Photoresist

Fabrication of Ordered Arrays of Silicon Nanopillars at Selected Sites

Formation of 10 Nm Si Structures Using Size-Selected Metal Clusters

Size and Morphology Control of Highly-Ordered Nano-Silicon Pillar Fabricated by Direct Nanosphere Lithography

Fabrication of large-scale periodic silicon nanopillar arrays for 2D nanomold using modified nanosphere lithography☆

Fabrication of Ordered Arrays of Silicon Cones by Optical Diffraction in Ultrafast Laser Etching with SF6

Fabrication of Micro-Pillar by plasma etching texturing of Carbon-Based thin film

A route to engineered high aspect-ratio silicon nanostructures through regenerative secondary mask lithography

Versatile Approach of Silicon Nanofabrication without Resists: Helium Ion-Bombardment Enhanced Etching

High aspect ratio arrays of Si nano-pillars using displacement Talbot lithography and gas-MacEtch

Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns

Fabrication of Nanostructures on Si Surface Using Gold Nanoparticle Mask

Nanofabrication of high aspect ratio structures using an evaporated resist containing metal

Controlled thinning and surface smoothening of silicon nanopillars