Abstract:Gold nanoclusters are promising materials for a variety of applications because of their unique "superatom" structure, extraordinary stability, and discrete electronic energy levels. Controlled synthesis of well-defined Au nanoclusters strongly depends on rational design and implementation of their synthetic chemistry. Among the numerous approaches for the synthesis of monodisperse Au nanoclusters, etching of pre-formed polydisperse clusters has been widely employed as a top-down method. Understanding the formation mechanism of metal nanoclusters during the etching process is important. Herein, we synthesized monodisperse Au-13(L-3)(2)(SR)(4)Cl-4 nanoclusters via an etching reaction between polydisperse 1,3-bis(diphenylphosphino) propane (L-3)-protected polydisperse Au-n (15 <= n <= 60) clusters and a mixed solution of HCl/dodecanethiol (SR). The Au-13 product, with a mean size of (1.1 +/- 0.2) nm, shows pronounced step-like multiband absorption peaks centered at 327, 410, 433, and 700 nm. The synthetic protocol has a suitable reaction rate that allowss for real-time spectroscopic studies. We used a combination of in situ X-ray absorption fine structure (XAFS) spectroscopy, UV-Vis absorption spectroscopy, and matrix-assisted laser desorption ionization mass-spectrometry (MALDI-MS) to study the kinetic formation process of monodisperse Au-13 nanoclusters. Emphasis was given to the detection of reaction intermediates. The study revealed that the size-conversion of the Au-13 nanoclusters can be divided into three stages. In the first stage, the polydisperse Au-15-Au-60 clusters, covering a wide m/z range of 3000-13000, are prominently decomposed into smaller Au-8-Au-11 (within a m/z range of 3000-4000) species owing to the etching effect of HCl. They are immediately stabilized by the absorbed SR, L-3, and Cl- ligands to form metastable intermediates, as indicated by the high intensity of the Au-ligand coordination peak at 0.190 nm as well as the low intensity of the Au-Au peaks (0.236 and 0.288 nm) in the Fourier-transform (FT) EXAFS spectra. In the second stage, these Au-8-Au-11 intermediates are grown into Au13 cores. The experimental X-ray absorption near-edge spectra, totally different from that of Au(I)-SR polymer, could be well reproduced by the calculated spectrum of the Au13P8Cl4 cluster. The Au-ligand coordination number (1.0) obtained from the EXAFS fitting is much closer to the nominal values in Au-13(L-3)(2)(SR)(4)Cl-4 (0.92) than to that in Au(I)-SR polymers (2.0), suggesting that majority of the Au atoms are in the form of Au-13 clusters. The driving force for this growth process is primarily the geometric factor to form a complete icosahedral Au-13 skeleton through the incorporation of Au(I) ions or Au(I)-Cl oligomers pre-existing in the solution. In the third stage, the composition of the clusters is nearly unchanged as indicated by the MALDI-MS and the UV-vis spectra; however, their atomic structure undergoes rearrangement to the energetically stable structure of Au-13(L-3)(2)(SR)(4)Cl-4. During this structural rearrangement, the central-peripheral and peripheral-peripheral Au-Au bond lengths (RAu-Au(c-p) and RAu-Au(p-p)) decrease from 0.272 to 0.267 nm and 0.295 to 0. 289 nm, respectively, resulting in considerable structural distortion of the original icosahedral Au-13 skeleton. This distortion is also reflected by the slightly increased disorder degree of the Au-Au bonds from 0.00015 to 0.00017 nm(2). This work expands our understanding of the kinetic growth process of metal nanoclusters and promotes design and synthesis of metal nanomaterials in a controllable manner.

Formation of 10 Nm Si Structures Using Size-Selected Metal Clusters

Fabrication of Size-Controlled 10-Nm Scale Si Pillars Using Metal Clusters As Formation Nuclei

Fabrication of 10-nm Si pillars with self-formed etching masks

Deposition of Size-Selected Clusters and Application in Silicon Nanofabrication

Fabrication of Submicrometer Inp Pillars by Colloidal Lithography and Dry Etching

Fabrication Of Silicon Cones And Pillars Using Rough Metal Films As Plasma Etching Masks

In Situ Study of Formation Kinetics of Au Nanoclusters During HCl and Dodecanethiol Etching

Fabrication of ordered arrays of silicon nanopillars in silicon-on-insulator wafers

Size and Morphology Control of Highly-Ordered Nano-Silicon Pillar Fabricated by Direct Nanosphere Lithography

High aspect ratio arrays of Si nano-pillars using displacement Talbot lithography and gas-MacEtch

Dielectric Behavior and Prolate Growth Patterns of Silicon Clusters Si N with N = 12–30 by Cryogenic Electric Beam Deflection

Controlled thinning and surface smoothening of silicon nanopillars

Assembling and Disassembling Ag Clusters on Si(111)-(7×7) by Vertical Atomic Manipulation.

Microfabrication of Nanoscale Cluster Chains on A Patterned Si Surface

Characterisation of the Morphology of Surface-Assembled Au Nanoclusters on Amorphous Carbon

Precipitation and Crystallization of Nanometer Si Clusters in Annealed Si-Rich Sio2 Films

Molecular dynamics simulation of Si trench etching with SiO2 hard masks

Note: Production of Silver Nanoclusters Using a Matrix-Assembly Cluster Source with a Solid CO2 Matrix.

Scaling Relations For Implantation Of Size-Selected Au, Ag, And Si Clusters Into Graphite

Trapping of Size-Selected Ag Clusters at Surface Steps

Controlled Formation of GeSi Nanostructures on Periodic Si (001) Sub-Micro Pillars.