Fast Patterning and Dry-Etch of SiNxfor High Resolution Nanoimprint Templates

Shu Zhang,Ji Wan,Bing-Rui Lu,Songhai Xie,Yifang Chen,Xin-Ping Qu,Ran Liu
DOI: https://doi.org/10.1088/1674-4926/30/6/066001
2009-01-01
Abstract:We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography (EBL) and a dry etch technique on a SiNx substrate, intended for large area manufacturing. To this end, the highly sensitive chemically amplified resist (CAR), NEB-22, with negative tone was used. The EBL process first defines the template pattern in NEB-22, which is then directly used as an etching mask in the subsequent reactive ion etching (RIE) on the SiNx to form the desired templates. The properties of both e-beam lithography and dry etch of NEB-22 were carefully studied, indicating significant advantages of this process with some drawbacks compared to when Cr was used as an etching mask. Nevertheless, our results open up a good opportunity to fabricate high resolution imprint templates with the prospect of wafer scale manufacturing.
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