Abstract:The preparation and characteristics of silicon nanoarrays is now an attractive areas of research. At present,most research focused on the optical and electrical properties and applications,and less field emission characteristics,as a mature technology of silicon planar support, silicon field emission cathode materials are easily compatible with the microelectronic integrated circuits, and so they have a broad application prospects.We present the fabrication of large-scale two dimensional periodic silicon nanoarrays using nanosphere lithography,and the field emission characteristics have been studied. The fabrication process includes following steps: first the crystalline silicon substrate was coated with a monolayer of self polystyrene (PS) spheres of 220 nm in diameter, then the sample was etched by reactive ion etching to produce silicon nanoarrays. AFM images of the nanoarrays show that the tips stand 60～70 nm high and the area density can achieve 6×109/cm2. All field emission measurements were performed at a vacuum of 1.0×10-4 Pa or better. Expected to improve the field emission characteristics, about 60 nm thickness of a amorphous carbon film was deposited on top of the silicon nanoarrays by plasma-enhanced chemical vapour deposition. Field emission results show that compared to silicon nanoarrays, silicon nanoarrays coated with a thin a-C film effectively lower the threshold fields, approximately 8.1 V/μm, while field enhancement factor increased. When the electric field intensity reached 20 V/μm, the current density can reach about 1.4 mA/cm2. The improvement of field emission originates from the anisotropic structure of the films,when conductive sp2 clusters embedded in an insulating sp3 matrix,the electric field has been enhanced.

Research on Fabrication of Silicon Field Emitter Arrays

Fabrication of Field Emitter Array with Dry Etching

Study on Fabrication Processing of Field Emitter Array

Electron Field Emission Characteristics from Single-crystal Silicon Nanoarrays Fabricated by Direct Lithography with Nanosphere Mask

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Study on the Fabrication of Field Emission Arrays Cathode

Field electron emission from ultra-high density Si nanotip arrays

Field Emission from a Periodic Amorphous Silicon Pillar Array Fabricated by Modified Nanosphere Lithography.

Fabrication and field emission property of a Si nanotip array

Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si

Formation and Field Emission Characteristics of Amorphous and Crystalline Si Nanoarrays

Fabrication and Field Emission of High-Density Silicon Cone Arrays

Morphology Control and Electron Field Emission Properties of High-Ordered Si Nanoarrays Fabricated by Modified Nanosphere Lithography

Laser microstructuring of Si surfaces for low-threshold field-electron emission

FORMATION AND FIELD EMISSION CHARACTERISTICS OF AMORPHOUS AND CRYSTALLINE <font>Si</font> NANOARRAYS

Fabrication and characterization of Si nanotip arrays for Si-based nano-devices

Fabrication of Large-Area Silicon Spherical Microlens Arrays by Thermal Reflow and ICP Etching

RIE of SiO_2 Nanoparticles and Its Application in Preparation of Silicon Nanopillar Array

Synthesis of Large-Area Vertically Aligned Silicon Nanotip Arrays by Combining Silver Mirror Reaction with Metal-Catalyzed Electroless Etching

Design, Fabrication and Characterization of Molybdenum Field Emitter Arrays (Mo-FEAs)

B13-P-03 Fabrication and Characterization of Silicon Field Emission Tips for Miniature Field Emission Electron Microscope