Abstract:The preparation and characteristics of silicon nanoarrays is now an attractive areas of research. At present,most research focused on the optical and electrical properties and applications,and less field emission characteristics,as a mature technology of silicon planar support, silicon field emission cathode materials are easily compatible with the microelectronic integrated circuits, and so they have a broad application prospects.We present the fabrication of large-scale two dimensional periodic silicon nanoarrays using nanosphere lithography,and the field emission characteristics have been studied. The fabrication process includes following steps: first the crystalline silicon substrate was coated with a monolayer of self polystyrene (PS) spheres of 220 nm in diameter, then the sample was etched by reactive ion etching to produce silicon nanoarrays. AFM images of the nanoarrays show that the tips stand 60～70 nm high and the area density can achieve 6×109/cm2. All field emission measurements were performed at a vacuum of 1.0×10-4 Pa or better. Expected to improve the field emission characteristics, about 60 nm thickness of a amorphous carbon film was deposited on top of the silicon nanoarrays by plasma-enhanced chemical vapour deposition. Field emission results show that compared to silicon nanoarrays, silicon nanoarrays coated with a thin a-C film effectively lower the threshold fields, approximately 8.1 V/μm, while field enhancement factor increased. When the electric field intensity reached 20 V/μm, the current density can reach about 1.4 mA/cm2. The improvement of field emission originates from the anisotropic structure of the films,when conductive sp2 clusters embedded in an insulating sp3 matrix,the electric field has been enhanced.

Fabrication and Field Emission of High-Density Silicon Cone Arrays

Fabrication and microstructures of Si composite nanocone arrays

Synthesis and Field Emission Property of SiCN Cone Arrays

Field emission of uniform carbon cone arrays grown on porous silicon substrate

Electron Field Emission Characteristics from Single-crystal Silicon Nanoarrays Fabricated by Direct Lithography with Nanosphere Mask

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Fabrication of cone-shaped CNF/SiC-coated Si-nanocone composite structures and their excellent field emission performance

Arrays of Si Cones Prepared by Ion Beams: Growth Mechanisms

Field electron emission from ultra-high density Si nanotip arrays

Multi-tip Cones Induced by Ion-Bombardment

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Fabrication And Field Emission Study Of Atomically Sharp High-Density Tungsten Nanotip Arrays

Field Emission from a Periodic Amorphous Silicon Pillar Array Fabricated by Modified Nanosphere Lithography.

Study on the Fabrication of Field Emission Arrays Cathode

Fabrication and field emission property of a Si nanotip array

Fabrication of the Highly Ordered Silicon Nanocone Array With Sub-5 nm Tip Apex by Tapered Silicon Oxide Mask

Structuring Nanodiamond Cone Arrays for Improved Field Emission

Research on Fabrication of Silicon Field Emitter Arrays

Field Emission Properties of Ni Nanocones Arrays Fabricated by Electrodeposition

Field Emission from Dense, Sparse, and Patterned Arrays of Carbon Nanofibers

High Emission Current Density, Vertically Aligned Carbon Nanotube Mesh, Field Emitter Array