Abstract:The nanostructure‐controllable TaSi2 arrays with vertically aligned nanotips are produced through a novel and straightforward method, involving advanced directional solidification, heat treatment, and etching process. The enhanced sharpness and high regularity of the TaSi2 nanotip array contribute to its favorable field emission performance, thereby advancing the potential application of TaSi2 as a cold cathode material in electronic devices. Recognizing the strong potential of cold cathodes for important commercial applications in fields such as electronics, there is a growing interest in the exploration of novel 1D nanomaterials. Among various cold cathode materials, TaSi2 is of great interest for its outstanding field emission performance. In this work, the Si‐TaSi2 eutectic composite with nano‐sized highly oriented TaSi2 fibers and semi‐coherent phase interfaces is prepared by the laser floating zone melting technique with a very high‐temperature gradient of 6000 K cm−1 at a solidification rate of 200 μm s−1. On the basis of directionally solidified Si‐TaSi2 eutectic composite, well‐aligned TaSi2 nanorod and nanotip arrays are fabricated by inductively coupling plasma (ICP) etching process and HNO3/HF wet etching process, respectively. The field emission measurements show that the field enhancement factor, turn‐on electric field, and effective work function are strongly affected by tip morphologies. The TaSi2 array with regular nanotip structure possesses the best field emission characteristic among all TaSi2 nanostructures, with a relatively low turn‐on field of 4.8 V μm−1 and a high current density of 733 μA cm−2. These findings preliminarily establish a clear relationship between the performance and structure of the array, providing technical guidance for the application of this material in electronic devices.

Multi-tip Cones Induced by Ion-Bombardment

Arrays of Si Cones Prepared by Ion Beams: Growth Mechanisms

Fabrication and Field Emission of High-Density Silicon Cone Arrays

Fabrication and microstructures of Si composite nanocone arrays

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Growth mechanism and field emission properties of nickel nanocones array fabricated by one-step electrodeposition

Diamond Cone Arrays with Controlled Morphologies Formed by Self-Organized Selective Ions Sputtering

Cone Array Formation on Si Surfaces by Low-Energy He Plasma Irradiation with Magnetron Sputtering Pre-Deposited Ta

Field electron emission from ultra-high density Si nanotip arrays

Formation of submicron cone-shaped surface morphology under ion-beam sputtering of nanostructured nickel

Synthesis and Field Emission Property of SiCN Cone Arrays

Silicon Carbon Nitride Cones Prepared from an Ellipsoid Microwave Plasma Chemical Vapor Deposition Reactor

Epitaxial Nucleation of Diamond Polytypes on Silicon by Direct Ion Beam Deposition

Aluminum-enhanced sharpening of silicon nanocones

Field emission of uniform carbon cone arrays grown on porous silicon substrate

Insight into TaSi2 Nanostructures with Different Morphologies and Their Field Emission Properties

Controlled growth of nickel nanocrystal arrays and their field electron emission performance enhancement via removing adsorbed gas molecules

Microfabrication of Silicon Tip Structures for Multiple-Probe Scanning Tunneling Microscopy

Field Emission Properties of Ni Nanocones Arrays Fabricated by Electrodeposition

Enhancing Electron Emission From Silicon Tip Arrays By Using Thin Amorphous Diamond Coating

Fabrication of the Highly Ordered Silicon Nanocone Array With Sub-5 nm Tip Apex by Tapered Silicon Oxide Mask