Abstract:The preparation and characteristics of silicon nanoarrays is now an attractive areas of research. At present,most research focused on the optical and electrical properties and applications,and less field emission characteristics,as a mature technology of silicon planar support, silicon field emission cathode materials are easily compatible with the microelectronic integrated circuits, and so they have a broad application prospects.We present the fabrication of large-scale two dimensional periodic silicon nanoarrays using nanosphere lithography,and the field emission characteristics have been studied. The fabrication process includes following steps: first the crystalline silicon substrate was coated with a monolayer of self polystyrene (PS) spheres of 220 nm in diameter, then the sample was etched by reactive ion etching to produce silicon nanoarrays. AFM images of the nanoarrays show that the tips stand 60～70 nm high and the area density can achieve 6×109/cm2. All field emission measurements were performed at a vacuum of 1.0×10-4 Pa or better. Expected to improve the field emission characteristics, about 60 nm thickness of a amorphous carbon film was deposited on top of the silicon nanoarrays by plasma-enhanced chemical vapour deposition. Field emission results show that compared to silicon nanoarrays, silicon nanoarrays coated with a thin a-C film effectively lower the threshold fields, approximately 8.1 V/μm, while field enhancement factor increased. When the electric field intensity reached 20 V/μm, the current density can reach about 1.4 mA/cm2. The improvement of field emission originates from the anisotropic structure of the films,when conductive sp2 clusters embedded in an insulating sp3 matrix,the electric field has been enhanced.

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Fabrication of the Highly Ordered Silicon Nanocone Array With Sub-5 nm Tip Apex by Tapered Silicon Oxide Mask

Fabrication and Characterization of Ge Nanodot/si Nanowire Composite Structures

Wafer-Scale Fabrication of Silicon Nanocones via Controlling Catalyst Evolution in All-Wet Metal-Assisted Chemical Etching

Structure Transition Mechanism Of Single-Crystalline Silicon, G-C3n4, And Diamond Nanocone Arrays Synthesized By Plasma Sputtering Reaction Deposition

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Fabrication of Single Crystalline Smb6 Nanocone Arrays and Investigation of Their Field Emission Properties

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Fabrication Of Silicon Cones And Pillars Using Rough Metal Films As Plasma Etching Masks

Synthesis and Characterization of Si/Ge Composite Nanostructures

Fabrication of Ordered Arrays of Silicon Cones by Optical Diffraction in Ultrafast Laser Etching with SF6