Abstract:The main obstacle of implementing numerical simulations for the prediction of nucleation and epitaxial growth is the variety of physical processes with a considerable difference in time and spatial scales. During the growth of nanostructures and epitaxy deposition of atoms, surface and bulk diffusion, nucleation of two-dimensional and three-dimensional clusters, transitions from two dimensional to three dimensional growth, stress relaxation occur. Thus, it is challenging to describe all of them in the framework of a single physical model. In the present work a multi-scale simulation of the epitaxial growth of silicon carbide nanostructures on silicon using three numerical methods, namely Molecular Dynamics, kinetic Monte Carlo, and the Rate Equations was implemented. Molecular Dynamics was used for the estimation of kinetic parameters of atoms and stress fields at the surface, which are input parameters for the other simulation methods. Kinetic Monte Carlo simulations allowed investigating basic nucleation processes and the transition from two dimensional nucleation to three dimensional cluster growth as well as the ordering of nanoclusters. Furthermore the influence of impurities on the nucleation of nanoscale SiC was studied. The energy barriers values obtained in Molecular Dynamics and the physical model used in the rate equation simulations was validated by Kinetic Monte Carlo. The Rate Equation simulation allowed studying the growth process at larger time scales taking into account the surface stress fields. As a result, a full time scale description spanning over a large substrate area of the morphological and structural surface evolution during SiC formation on Si was developed.

Spiral nucleation of silicon solidified on heterogeneous surface of carbon nanocones

Torsional Properties of Spiral Carbon Nanocones

Lamellar Nanostructures of Silicon Heterogeneously Solidified on Graphite Sheets

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Structure Transition Mechanism Of Single-Crystalline Silicon, G-C3n4, And Diamond Nanocone Arrays Synthesized By Plasma Sputtering Reaction Deposition

Batchwise growth of silica cone patterns via self-assembly of aligned nanowires.

Silicon Carbon Nitride Cones Prepared from an Ellipsoid Microwave Plasma Chemical Vapor Deposition Reactor

Synthesis and characterization of single-crystalline graphitic C3N4 nanocones

Syntheses and Growth Mechanisms of 3C-Sic Nanostructures from Carbon and Silicon Powders.

Carbide assisted in-suit growth and formation mechanism of SiC nanowires on the surface of defined carbon fibers

A scheme for fabricating single wall carbon nanocones standing on metal surfaces and an evaluation of their stability

Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si

Growth of Single-Crystalline Silicon Nanocone Arrays by Plasma Sputtering Reaction Deposition

A Scheme for the Growth of Graphene Sheets Embedded with Nanocones

Solid–liquid–solid (SLS) growth of coaxial nanocables: silicon carbide sheathed with silicon oxide

Diamond Nucleation on Surface of C 60 Thin Layers

The Formation of High-Density Uniform Silicon Nanocrystals on Insulator Substrate and Their Surface Morphology

Controlled growth of crystalline g-C 3 N 4 nanocone arrays by plasma sputtering reaction deposition

Thermal evaporation and solution strategies to novel nanoarchitectures of silicon carbide

Theoretical Analysis of the Formation of Face-Centered Cubic Si Nanocrystals by Magnetron Sputtering

Synthesis and Characterization of Several alpha-Silicon Nitride Nanostructures