Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Radiation damage and annealing behavior of 2.0 MeV 160Er+ implanted silicon

Cross-sectional Investigation of Radiation Damage of 2 MeV Proton-Irradiated Silicon Carbide

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Hrem Examination of Er Ion-Implanted in Si

Evolution of secondary defects in arsenic implanted Si

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Damage analysis of 25KeV As+ implantation into silicon with large tilt angles

Insights into High-Dose Helium Implantation of Silicon

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

Damage Production in Silicon Carbide by Dual Ion Beams Irradiation

INFRARED EMISSION FROM Si IMPLANTED WITH HIGH Er CONCENTRATION

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Depth Profiling by Raman Spectroscopy of High-Energy Ion Irradiated Silicon Carbide

High concentration erbium doping of silicon-rich SiO2 thin films on silicon

Structural and Luminescent Properties of Electron-Irradiated Silicon

Retention And Thermal Release Behavior Of Deuterium And Helium Implanted In Sic

Study on the damage evolution of 6H-SiC under different phosphorus ion implantation conditions and annealing temperatures

Enhanced silicon band edge related radiation: Origin and applicability for light emitters

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films