Abstract:This review investigates the measurement methods employed to assess the geometry and electrical properties of through-silicon vias (TSVs) and examines the reliability issues associated with TSVs in 3D integrated circuits (ICs). Presently, measurements of TSVs primarily focus on their geometry, filling defects, and the integrity of the insulating dielectric liner. Non-destructive measurement techniques for TSV contours and copper fillings have emerged as a significant area of research. This review discusses the non-destructive measurement of contours using high-frequency signal analysis methods, which aid in determining the stress distribution and reliability risks of TSVs. Additionally, a non-destructive thermal detection method is presented for identifying copper fillings in TSVs. This method exploits the distinct external characteristics exhibited by intact and defective TSVs under thermoelectric coupling excitation. The reliability risks associated with TSVs in service primarily arise from copper contamination, thermal fields in 3D-ICs, stress fields, noise coupling between TSVs, and the interactions among multiple physical fields. These reliability risks impose stringent requirements on the design of 3D-ICs featuring TSVs. It is necessary to electrically characterize the influence of copper contamination resulting from the TSV filling process on the reliability of 3D-ICs over time. Furthermore, the assessment of stress distribution in TSVs necessitates a combination of micro-Raman spectroscopy and finite element simulations. To mitigate cross-coupling effects between TSVs, the insertion of a shield between them is proposed. For efficient optimization of shield placement at the chip level, the geometric model of TSV cross-coupling requires continuous refinement for finite element calculations. Numerical simulations based on finite element methods, artificial intelligence, and machine learning have been applied in this field. Nonetheless, comprehensive design tools and methods in this domain are still lacking. Moreover, the increasing integration of 3D-ICs poses challenges to the manufacturing process of TSVs.

A Symmetric Bridge-Based Pre-Bond TSV Faults Detection Method

The Detection of Open and Leakage Faults for Prebond TSV Test Based on Weak Current Source

Voltage Skew-Based Test Technique for Pre-Bond TSVs in 3-D ICs

TSV Fault Modeling and A BIST Solution for TSV Pre-bond Test.

A Compressive-sensing based Testing Vehicle for 3D TSV Pre-bond and Post-bond Testing Data.

TSV Prebond Test Method Based on Switched Capacitors.

Fault Detection and Redundancy Design for TSVs in 3D ICs.

A Systematic Test Approach for Through-Silicon Via (tsv) Process

Self-test methodology and structures for pre-bond TSV testing in 3D-IC system

Post-bond Test for TSVs Using Voltage Division.

Pre-Bond Tsv Testing Method Using Constant Current Source

A Prebond TSV Test Scheme Using Oscillator

A Post-Bond TSVs Test Solution for Leakage Fault.

BIST Methodology, Architecture and Circuits for Pre-Bond TSV Testing in 3D Stacking IC Systems

A TSV Repair Method for Clustered Faults

An Optimization Algorithm for Pre-Bond TSV Probing Tests and Fault Localization

On Effective Through-Silicon Via Repair for 3-D-stacked ICs

A Post-Bond TSV Test Method Based on RGC Parameters Measurement

Fast Diagnosis of Multiple Open-Circuit Faults in a T-type Inverter Based on Voltages Across Half-Bridge Switches

A Short Review of Through-Silicon Via (TSV) Interconnects: Metrology and Analysis

Fault Diagnosis Method for Neutral Grounding Three-Phase Bridge Type SSFCL