A Prebond TSV Test Scheme Using Oscillator

Chun‐Yen Yu,Xiaole Cui,Shihong Zhou

DOI: https://doi.org/10.1109/icsict.2016.7998627

2016-01-01

Abstract:The TSV(Through-Silicon Via) plays an important role of inter-layer interconnection in 3D ICs. However, TSV is defect prone. This paper proposes a new scheme based on oscillator to monitor the defects of TSV at the prebond stage.

What problem does this paper attempt to address?

Post-bond Test for TSVs Using Voltage Division.

Bingqiang Jing,Xiaole Cui,Yalin Ran,Yufeng Jin

DOI: https://doi.org/10.1109/asicon.2015.7517145

2015-01-01

Abstract:Through Silicon Vias (TSVs) are the transmission lines between different bonding layers and are indispensable elements in three-dimensional integrated circuits (3D-ICs). But because of process problems, kinds of defects exist in TSVs, including open defects and short defects. A variety of test methods have been proposed for open defects, but few can deal with both open defects and short defects. In this work, a post-bond method is presented for both defects by using voltage division. TSVs with defects can be located by testing the output pulses. HSPICE simulations including process parameter variations show the effectiveness of the method.
A Compressive-sensing based Testing Vehicle for 3D TSV Pre-bond and Post-bond Testing Data.

Hantao Huang,Hao Yu,Cheng Zhuo,Fengbo Ren

DOI: https://doi.org/10.1145/2872334.2872351

2016-01-01

Abstract:Online testing vehicle is required for 3D TSV pre-bond and post-bond testing due to high probability of TSV failures. It has become a challenge to deal with large sets of generated testing data with limited probing when transmitting the data out. In this paper, a lossless compressive-sensing based testing vehicle is developed for online testing of TSVs. By exploring sparsity of the testing data under constraint of failure bound of TSV, sparse-representation based encoding can be deployed by XOR and AND network on chip to deal with large volume of testing data. Experimental results (with benchmarks) have shown that 89.70% pre-bond data compression rate can be achieved under 0.5% probability of failures; and 88.18% post-bond data compression rate can be achieved with 5% probability of failures.
A Symmetric Bridge-Based Pre-Bond TSV Faults Detection Method

Jun Liu,Zhi Chen,Songren Cheng,Chen Xiang,Tian Chen,Xi Wu,Yingchun Lu,Huaguo Liang

DOI: https://doi.org/10.1109/tim.2024.3427774

IF: 5.6

2024-07-26

IEEE Transactions on Instrumentation and Measurement

Abstract:Three-dimensional integrated circuits (3-D ICs) based on through-silicon via (TSV) have helped to improve the transistor density and are considered as an important technology supporting Moore's law. Pre-bond TSV test can effectively improve the performance and yield of 3-D ICs. This article proposes a symmetric bridge technique for the pre-bond TSV test. The proposed method treats the TSV as a capacitor placed on the bridge arm and enables the elements in the adjacent bridge arms to be symmetric and equal. When TSV is fault-free, the peak voltages at the two points diagonally across the bridge are equal; when TSV has a full-open fault, partial-open fault, or leakage fault, the peak voltages at the two points are no longer equal. A peak detection circuit is presented to detect the peak voltages and distinguish the fault types of TSV. Finally, a serial test architecture is presented to reduce the hardware overhead. Experiment results show that the proposed technique has better fault detection capability and better robustness against process, voltage, and temperature (PVT) variations compared to the ac bridge method.

engineering, electrical & electronic,instruments & instrumentation
Voltage Skew-Based Test Technique for Pre-Bond TSVs in 3-D ICs

Jun Liu,Zhi Chen,Tian Chen,Xi Wu,Huaguo Liang,Xiaohui Yuan

DOI: https://doi.org/10.1109/tcsii.2024.3373897

2024-01-01

Abstract:In 3D ICs, the manufacturing process of through silicon via (TSV) is still immature, which can result in resistive open faults and leakage faults. Pre-bond TSV tests can effectively improve the performance and yield of 3D ICs. In the paper, a new pre-bond TSV test method based on the voltage skew is proposed. The proposed method charges a pre-set load capacitor during the voltage skew between faulty and fault-free TSV. It then measures the charge time to detect TSV faults. Furthermore, a variable drive inverter is designed to change the duration of voltage skew and recharge the load capacitor. By comparing the twice charge time, the type of TSV faults can be identified. The experimental results show that the proposed method can detect resistive open faults with Ropen≥400Ω and leakage faults with Rleak≤20MΩ. Compared to other test methods, the proposed method has higher detection capability.

engineering, electrical & electronic
Self-test methodology and structures for pre-bond TSV testing in 3D-IC system

chao wang,jun zhou,bin zhao,xin liu,philippe royannez,minkyu je

DOI: https://doi.org/10.1109/ASSCC.2012.6570808

2012-01-01

Abstract:This paper presents a self-test methodology and test structures for testing Through Silicon Vias (TSVs) in 3D-IC system prior to stacking in order to improve overall yield. A Scan Switch Network (SSN) architecture is proposed to perform pre-bond TSV scan testing. In the SSN, novel self-test structures are proposed and integrated to detect TSV defects by stuck-atfault and delay-based tests. By exploiting the inherent delay characteristics of TSV, the variation of TSV-to-substrate resistance caused by TSV defects can be mapped to a path delay change and detected. Compared with prior works, the proposed test architecture addresses pre-bond TSV testing under an integrated test solution with low overhead. Test chip measurement and analysis are presented to verify the proposed self-test methodology and structures.
Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Wen-Sheng Zhao,Yong-Xin Guo,Wen-Yan Yin

DOI: https://doi.org/10.1109/edaps.2012.6469384

2012-01-01

Abstract:Through-silicon vias (TSV) have been proposed to enable the “More-than-Moore” technology. In this paper, comparative studies on TSVs with different configurations are carried out based on their equivalent circuit model, with their electrical performance variations characterized together with coupling capacitance and conductance treated appropriately.
An Optimization Algorithm for Pre-Bond TSV Probing Tests and Fault Localization

Long Chen,Xiaole Cui,Chi Yu,Xiaoyan Xu,Shengming Zhou

DOI: https://doi.org/10.1109/icsict.2016.7998626

2016-01-01

Abstract:The pre-bond through silicon via (TSV) probing tests and fault localization are important for yield assurance in 3D-SICs. This paper proposes an optimization algorithm to generate the preferable set of test sessions for pre-bond TSV probing tests. Test sessions generated by the optimization algorithm can not only get localization of faulty TSVs in TSV network, but also reduce test time and cost of the pre-bond TSV test. By using the proposed optimization algorithm, the reduction in pre-bond TSV test time is 10% for the pinpointing of four faulty TSVs in 13-TSV network and even 20.5% for one faulty TSV in 6-TSV network compared to the original one [4].
Novel LC resonant clocking for 3D IC using TSV-inductor and capacitor

Shaoheng Luo,Baixin Chen,Ke Li,Cheng Zhuo,Yiyu Shi

DOI: https://doi.org/10.1109/edaps.2017.8277019

2017-01-01

Abstract:At sub-14nm regime, large area overhead induced by on-chip capacitor and inductor is a major concern to ensure power integrity or enable on-chip applications. To overcome this issue, a novel 3D Through-Silicon-Via (TSV) based capacitor is investigated in this work, which may achieve both high density and high performance. The capacitor simulated in this work alleviates the depletion effect adding doping region around the TSV so that the capacitor can maintain its maximum value within operation voltage range. Moreover, the equivalent serial resistance of the proposed capacitor is reduced through doping and distributed grounded contact technology. An LC resonant clock is also simulated in this work, by replacing conventional capacitor and inductor to TSV based structures, it may achieve a 16.3x capacitor area reduction and 2.2x inductor area reduction while the performance stays almost the same.
Yield-aware Time-Efficient Testing and Self-Fixing Design for TSV-based 3D ICs

Jing Xie,Yu Wang,Yuan Xie

DOI: https://doi.org/10.1109/aspdac.2012.6165053

2012-01-01

Abstract:Testing for three dimensional (3D) integrated circuits (ICs) based on through-silicon-via (TSV) is one of the major challenges for improving the system yield and reducing the overall cost. The lack of pads on most tiers and the mechanical vulnerability of tiers after wafer thinning make it difficult to perform 3D Known-Good-Die (KGD) test with the existing 2D IC probing methods. This paper presents a novel and time-efficient 3D testing flow. In this Known-Good-Stack (KGS) flow, a yield-aware TSV defect searching and replacing strategy is introduced. The Build-in-Self-Test (BIST) design with TSV redundancy scheme can help improve the system yield for today's imperfect TSV fabrication process. Our study shows that less than 6 redundant TSVs is enough to increase the TSV yield to 98% for a TSV cluster with a size under 16×16 with relatively low initial TSV yield. The average TSV cluster testing and self-fixing time is about 3-16 testing cycle depending on the initial TSV yield.1
Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Enxiao Liu,Huimin Lee,Xingchang Wei,Erping Li

DOI: https://doi.org/10.1109/EDAPS.2011.6213805

2011-01-01

Abstract:Through silicon vias (TSV) are critical vertical interconnects in 3D IC. We comparatively studied the signal integrity of different designs of TSVs both existing and new in a single die up to 20 GHz. For TSVs in multiple die stacking, we proposed to use the cascaded scattering matrix approach for their signal integrity analysis. The results are validated against those from full-path simulation. Compared to full-path simulation by a full-wave approach, the cascaded approach reduces simulation time and memory usage.
BIST Methodology, Architecture and Circuits for Pre-Bond TSV Testing in 3D Stacking IC Systems

Chao Wang,Jun Zhou,Roshan Weerasekera,Bin Zhao,Xin Liu,Philippe Royannez,Minkyu Je

DOI: https://doi.org/10.1109/TCSI.2014.2354752

2015-01-01

Abstract:This paper presents a built-in self test (BIST) methodology, architecture and circuits for testing Through Silicon Vias (TSVs) in 3D-IC systems prior to stacking in order to improve 3D-IC yield and reduce overall test cost. A scan switch network (SSN) architecture is proposed to perform pre-bond TSV scan testing in test mode, and operate as functional circuit in functional mode, respectively. In the SSN, novel test structures and circuits are proposed to address pre-bond TSV test accessibility issue and perform stuck-at-fault tests and TSV tests. By exploiting the inherent RC delay characteristics of TSV, a novel delay-based TSV test method is also proposed to map the variation of TSV-to-substrate resistance due to TSV defects to a test path delay change. Compared with state-of-art methods, the proposed BIST methodology addresses pre-bond TSV testing with a low-overhead integrated test solution which is compatible to existing 2D-IC testing method. The proposed BIST architecture and method can be implemented by standard DFT design flow and integrated into a unified pre-bond TSV test flow. Experiment results and robustness analysis are presented to verify the effectiveness of the proposed self-test methodology, architecture, and circuits.
Through Silicon Via (TSV) Defect Modeling, Measurement, and Analysis

Daniel H. Jung,Youngwoo Kim,Jonghoon J. Kim,Heegon Kim,Sumin Choi,Yoon-Ho Song,Hyun-Cheol Bae,Kwang-Seong Choi,Stefano Piersanti,Francesco de Paulis,Antonio Orlandi,Joungho Kim

DOI: https://doi.org/10.1109/tcpmt.2016.2631731

2017-01-01

Abstract:Through silicon via (TSV)-based 3-D integrated circuit has introduced the solution to limitlessly growing demand on high system bandwidth, low power consumption, and small form factor of electronic devices. As the system design aims for higher performance, the physical dimensions of the channels are continuously decreasing. With TSV diameter of less than 10 $\mu \text{m}$ and pitch of several tens of micrometers, the I/O count has increased up to the order of tens of thousands for wide bandwidth data transmission. However, without highly precise fabrication process, such small structures are susceptible to a variety of defects. For the first time, in this paper, we propose a noninvasive defect analysis method for high-speed TSV channel. With designed and fabricated test vehicles, the proposed method is demonstrated with ${S}$ -parameter and time-domain reflectometry measurement results. In addition, we present equivalent circuit models of TSV daisy-chain structures, including the circuit components for open defect and short defect. With characterized dominant factors in each frequency range, $S_{11}$ is analyzed to distinguish and locate the defects by the amount of capacitance, resistance, and inductance that the signal experiences. ${S}$ -parameter measurement sufficiently allows high-frequency defect analysis of TSV channel without destroying the test sample. We experimentally verified the accuracy of the suggested model by comparing the ${S}$ -parameter results from circuit simulations and measurements. Finally, the model is modified to discuss the effects of open defect and short defect on the electrical characteristics of TSV channel.
Cost-Effective Test Optimized Scheme of TSV-Based 3D SoCs for Pre-Bond Test

Kele Shen,Dong Xiang,Zhou Jiang

DOI: https://doi.org/10.1109/isvlsi.2014.57

2014-01-01

Abstract:Three-dimensional (3D) SoC is becoming one of the most promising approaches for extending Moore's Law. However, managing test optimized scheme to reduce the cost of 3D SoCs is a significant challenge. In this paper, we propose a cost-effective optimized scheme of 3D SoCs for pre-bond test based on a generic cost model we defined. Both test time and number of TSV are considered in our novel scheme. Experimental results on ITC'02 SoC benchmark circuits show that our scheme is superior to one baseline solution and can effectively achieve good performance on test optimization.
An In-line Test Method for the TSV Insulation Integrity

MIAO Min,XU Yichao,WANG Guanjiang,SUN Xin,FANG Runiu,JIN Yufeng

DOI: https://doi.org/10.3969/j.issn.1671-7449.2012.06.001

2012-01-01

Abstract:Through silicon via(TSV) is the most vital technology of the advanced 3D system-in-package integration and 3D IC integration.The insulation integrity of TSVs is among the key factors that determine TSV electrical properties and long term reliability.Total production cost can be reduced by performing in-line test during manufacturing and then screening out defective wafers at early stage.An in-line method is proposed to verify the TSV insulation quality after the blind vias are formed and before next process(i.e.wafer thinning) is carried out.During the test,the leakage current data between two blind vias is obtained and plotted through I-V characteristic test by probing the pads upon these blind TSVs.TSVs can be determined as a qualified one with insulation integrity when I-V curve varies linearly between 7 V～10 V and the leakage current is on the orders of dozens of pA.If an abrupt rise of leakage current or even breakthrough appears at voltages equal to or under 7 V,then it can be deduced that the insulation integrity of one or both of the blind vias under test has been compromised.Finite element method(FEM) simulation was used to illustrate the testing principle,and experimental test were carried out for validation.
Crosstalk Reduction in TSV Arrays with Direct Ohmic Contact Between Metal and Silicon-Substrate

D. C. Yang,E. P. Li,Li Jun,X. C. Wei,J. Y. Xie,M. Swaminathan

2014-01-01

Abstract:In response to the requirement of novel crosstalk-reduction scheme for high density through silicon via(TSV) interconnects in silicon interposer, this paper presents a structure and performance analysis of through-silicon via(TSV) with direct ohmic contact between a ground TSV and silicon substrate for coupling mitigation purposes. We further expand the structure to a 3×3 TSV array and investigate its cross-talk performance. The simulation results show that the signaling scheme, which uses direct ohmic contact for ground TSVs, can effectively reduce the crosstalk and coupling noise between signal TSVs than the conventional design.
A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

De-Cao Yang,Jianyong Xie,Madhavan Swaminathan,Xing-Chang Wei,Er-Ping Li

DOI: https://doi.org/10.1109/lmwc.2013.2270459

IF: 3

2013-01-01

IEEE Microwave and Wireless Components Letters

Abstract:High-density through-silicon via (TSV) interconnects in silicon interposer require effective crosstalk-reduction signaling schemes and rigorous crosstalk modeling techniques. In this letter, we propose a rigorous model for grounded TSVs with ohmic contact. The proposed model takes into account contact resistance, doping density, and doping-region capacitance for the metal-silicon interface of grounded TSVs. The comparison between modeling results and full-wave simulations validates the accuracy of the proposed model for signal-ground-signal vias.
DfT optimization for pre-bond testing of 3D-SICs containing TSVs

Jia Li,Dong Xiang

DOI: https://doi.org/10.1109/ICCD.2010.5647651

2010-01-01

ICCD

Abstract:This paper proposes to provide testability for the breaking point produced by the Through-Silicon-Vias (TSVs) of 3D-Stacked ICs (3D-SICs) during pre-bond testing with low Design-for-Testability (DfT) cost. Different from prior solutions which utilize two additional wrapper cells for the breaking point at each TSV, this paper proposes to provide the testability of two ends of the TSVs respectively by reusing the existing Primary-Inputs (PIs)/ Primary-Outputs (POs) and Pseudo-PIs/Pseudo- POs (PPIs/PPOs). To further reduce the hardware overhead and enhance the efficiency of the proposed method, this paper has also proposed the metrics and algorithm on deciding the selecting order of the TSVs and the PIs/PPIs (POs/PPOs) to be reused. The experimental results on larger ITC'99 benchmark circuits validate the effectiveness of the proposed method.
Adaptive 3D-IC TSV Fault Tolerance Structure Generation

Song Chen,Qi Xu,Bei Yu

DOI: https://doi.org/10.1109/tcad.2018.2824284

2019-05-01

Abstract:In 3-D integrated circuits (3D-ICs), through silicon via (TSV) is a critical technique in providing vertical connections. However, the yield is one of the key obstacles to adopt the TSV-based 3D-ICs technology in industry. Various fault-tolerance structures using spare TSVs to repair faulty functional TSVs have been proposed in literature for yield and reliability enhancement, but a valid structure cannot always be found due to the lack of effective generation methods for fault-tolerance structures. In this paper, we focus on the problem of adaptive fault-tolerance structure (AFTS) generation. Given the relations between functional TSVs and spare TSVs, we first calculate the maximum number of tolerant faults in each TSV group. Then we propose an integer linear programming-based model to construct the AFTS with minimal multiplexer delay overhead and hardware cost. We further develop a speed-up technique through an efficient min-cost-max-flow model. All the proposed methodologies are embedded in a top-down TSV planning framework to form functional TSV groups and generate AFTSs. Experimental results show that, compared with state-of-the-art, the number of spare TSVs used for fault tolerance can be effectively reduced.

engineering, electrical & electronic,computer science, interdisciplinary applications, hardware & architecture
Fabrication and In-Situ Evaluation of Copper TSV Interconnection

Shenglin Mai,Yunhui Zhu,Xin Sun,Min Miao,Jin Chen,Yufeng Jin

DOI: https://doi.org/10.1109/icept.2011.6066801

2011-01-01

Scientia Forestalis

Abstract:In this paper, a process for making copper Though-Silicon-Via (TSV) interconnection is developed. In order to improve the yield of the process, challenging issues in the process is discussed and typical failures in the TSV interconnection are summarized. A measuring scheme is proposed to monitor these failures in the process and simulation is performed to testify the feasibility of the method.
A TSV Repair Method for Clustered Faults

Shijie Zhang,Xiaole Cui,Qiang Zhang,Yufeng Jin

DOI: https://doi.org/10.1109/asicon.2015.7517144

2015-01-01

Abstract:Three-dimensional integrated circuits (3D-ICs) using Through-silicon Vias (TSVs) allow the stacking multiple dies to manufacture chips with many benefits, such as high density and high bandwidth. Unfortunately, the yield of 3D dies, stacking with a large number of TSVs is significantly impacted by the reliability of TSVs. In order to improve the yield of 3D-ICs, TSVs must be reparable. In practice, the faulty TSVs may cluster because of the imperfect bonding quality of TSVs. A right trapezoidal grouping based method was proposed to repair clustered faulty TSVs in this paper. Experimental results show that the yield of the proposed method is 99.80% with 50% area reduction compared to that of the router-based method.

A Prebond TSV Test Scheme Using Oscillator

Post-bond Test for TSVs Using Voltage Division.

A Compressive-sensing based Testing Vehicle for 3D TSV Pre-bond and Post-bond Testing Data.

A Symmetric Bridge-Based Pre-Bond TSV Faults Detection Method

Voltage Skew-Based Test Technique for Pre-Bond TSVs in 3-D ICs

Self-test methodology and structures for pre-bond TSV testing in 3D-IC system

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

An Optimization Algorithm for Pre-Bond TSV Probing Tests and Fault Localization

Novel LC resonant clocking for 3D IC using TSV-inductor and capacitor

Yield-aware Time-Efficient Testing and Self-Fixing Design for TSV-based 3D ICs

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

BIST Methodology, Architecture and Circuits for Pre-Bond TSV Testing in 3D Stacking IC Systems

Through Silicon Via (TSV) Defect Modeling, Measurement, and Analysis

Cost-Effective Test Optimized Scheme of TSV-Based 3D SoCs for Pre-Bond Test

An In-line Test Method for the TSV Insulation Integrity

Crosstalk Reduction in TSV Arrays with Direct Ohmic Contact Between Metal and Silicon-Substrate

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

DfT optimization for pre-bond testing of 3D-SICs containing TSVs

Adaptive 3D-IC TSV Fault Tolerance Structure Generation

Fabrication and In-Situ Evaluation of Copper TSV Interconnection

A TSV Repair Method for Clustered Faults