Abstract:Direct epitaxial growth of germanium (Ge) film on silicon (Si) substrate (GOSS) holds great potential in micro-electronics and optoelectronics. However, due to the 4.2% lattice mismatch between Si and Ge, it is difficult to directly obtain high quality Ge by epitaxy on Si substrate. Laser recrystallization technology provides a simple, efficient and low-cost way to improve the crystal quality of epitaxial Ge film grown on Si substrate. This technology is essentially a process of thermally induced phase transformation. By controlling the laser process parameters, epitaxial film of a certain thickness is melted, so that lattice rearrangement and recrystallization are achieved, and high-quality thin Ge/Si can be prepared. Laser recrystallization is a high temperature thermal process, and Si–Ge interdiffusion may detrimentally occur. In this paper, the mechanism of Si–Ge interdiffusion is discussed. Based on Fick's law of diffusion, a numerical model for Si–Ge interdiffusion of GOSS is established. On this basis, the process simulation of thermal annealing and laser recrystallization Si–Ge interdiffusion is carried out by Sentaurus Process simulation. The results show that compared with the traditional thermal annealing, the Si–Ge interdiffusion of Ge on Si almost does not occur in the process of laser recrystallization. By reasonably controlling the process parameters of laser recrystallization, the thin Ge film near the Si–Ge interface does not melt, which can not only improve the crystal quality of Ge epitaxial layer, but also effectively avoid the Si–Ge interdiffusion in the process of laser recrystallization. Through this research, we have aimed at predicting and control the Si–Ge interdiffusion, providing an important technical reference for the preparation of high quality GOSS by laser recrystallization technology.

Evolution of GeSi Islands in Epitaxial Ge-on-Si During Annealing

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Annealing Effects on the Microstructure of Ge/Si(001) Quantum Dots

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Ge/Si Interdiffusion In The Gesi Dots And Wetting Layers

Study of Si and Ge growth on Si(100) surface

Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer

Evolution of secondary defects in arsenic implanted Si

Surface Mobility Difference Between Si and Ge and Its Effect on Growth of SiGe Alloy Films and Islands.

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

The growth and investigation of SiGe films on buried Ge islands

Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering

Study of Si–Ge Interdiffusion in Laser Recrystallization of Ge Epitaxial Film on Si Substrate

Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion

Influences of the Si(1 1 3) anisotropy on Ge nanowire formation and related island shape transition

Studies of Morphological Instability and Dislocation Formation in Heteroepitaxial Si1−xGex Thin Films Via Controlled Annealing Experiments

Influences of the Si(113) anisotropy on Ge nanowire formation and related island shape transition

Island-growth of SiCGe films on SiC

Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

Ge Molecular Beam Epitaxy on Si(113): Surface Structures, Nanowires and Nanodots