Abstract:Metal organic frameworks (MOFs) are chemically functionalized micro- and rnesoporous materials with high surface areas and are attractive for multiple applications including filtration, gas storage, and catalysis. Postsynthetic modification (PSM), via solution or vapor-based techniques, is a way to impart additional complexity and functionality into these materials. There is a desire to shift toward vapor-phase methods in order to ensure more controlled modification and more efficient reagent and solvent removal from the modified MOF material. In this work we explore how the metal precursors titanium tetrachloride (TiCl4.) and trimethylaluminum (TMA), commonly used in atomic layer deposition, react with UiO-66-NH2 MOF. Using in situ quartz crystal microbalance (QCM) and Fourier transform infrared spectroscopy (FTIR) at 150 and 250 degrees C, we find that the ALD precursors react with mu(3)-OH hydroxyl and mu(3)-O bridging oxygen groups on Zr-6 nodes, as well as oxygen from carboxylate linker groups. The reactions occur predominantly at the crystal surface at mu(3)-OH hydroxyl sites, with TiCl4 exhibiting greater diffusion into the MOF subsurface. FTIR analysis suggests that, at 150 degrees C, both TiCl4 and TMA reversibly dehydroxylate the hydroxylated UiO-66-NH2, which is accompanied by distortion of the zirconium metal clusters. Finally, we show that TiCl4 is able to react with the dehydroxylated UiO-66-NH2 structure, suggesting that TiCl4 is also able to react directly with the bridging oxygen in the metal clusters or carboxylate groups on the organic ligand. A better understanding of chemical and thermally driven MOF dehydroxylation reactions can be important for improved postsynthetic modification of MOFs.

Initial Surface Reactions Mechanisms of Atomic Layer Deposition TiO<sub>2</sub><sub> </sub>Using Ti(OCH<sub>3</sub>)<sub>4</sub> and H<sub>2</sub>O as Precursors

Initial Surface Reactions Mechanisms of Atomic Layer Deposition Tio2 Using Ti(Och3)(4) and H2o As Precursors

Initial Surface Reactions Mechanisms Of Atomic Layer Deposition Tio2 On H/Si(100)-2x1 Surface

Reversible Low-Temperature Metal Node Distortion During Atomic Layer Deposition of Al2o3 and Tio2 on Uio-66-Nh2 Metal-Organic Framework Crystal Surfaces

Quantum Chemical Study of the Initial Surface Reactions in Atomic Layer Deposition of TiN on the SiO(2) Surface.

Atomic Layer Deposition of Tio2 from Tetrakis-Dimethyl-Amido Titanium or Ti Isopropoxide Precursors and H2o

Initial Surface Reactions in Atomic Layer Deposition of Al2O3on the Hydroxylated GaAs(001)-4 × 2 Surface

Initial Growth Mechanisms of ZrO2 and TiO2 Thin Films Using Cycloheptatrienyl–cyclopentadienyl Heteroleptic Precursors: A Comparative Study by Density Functional Theory

Reaction of tetrabutyl titanate in the adsorption layer on Si02 surface

Initial Surface Reactions in Atomic Layer Deposition of Hfsixoy and Hfo2: A Comparative Study by Density Functional Theory

Density Functional Theory Study on the Surface Reaction Mechanism of Atomic Layer Deposited Ta2o5 on Si(100) Surfaces

Atomic Layer Deposition of Hafnium Oxide from Tetrakis(ethylmethylamino)hafnium and Water Precursors

Initial growth mechanism of atomic layer deposited titanium dioxide using cyclopentadienyl-type precursor: A density functional theory study

H2O-based Atomic Layer Deposition Mechanism of Aluminum Oxide Using Trimethylaluminum

Density Functional Theory Study on Surface Reaction Mechanism of Atomic Layer Deposition of ZrO(2)on Si(100)-2 X 1

H 2 O-based atomic layer deposition mechanism of aluminum oxide using trimethylaluminum

Stepwise Mechanism and H2o-Assisted Hydrolysis in Atomic Layer Deposition of Sio2 Without A Catalyst

A theoretical study on the surface reaction of tetrakis(dimethylamino)titanium on titanium oxide

Surface Reaction Mechanism of Atomic Layer Deposition of Titanium Nitride Using Tetrakis(dimethylamino)titanium and Ammonia

Effect of Co-Reactants on Interfacial Oxidation in Atomic Layer Deposition of Oxides on Metal Surfaces

Quantum Chemical Study of the Initial Surface Reactions of HfO2 Atomic Layer Deposition on the Hydroxylated GaAs(001)-4×2 Surface