Abstract:Metal organic frameworks (MOFs) are chemically functionalized micro- and rnesoporous materials with high surface areas and are attractive for multiple applications including filtration, gas storage, and catalysis. Postsynthetic modification (PSM), via solution or vapor-based techniques, is a way to impart additional complexity and functionality into these materials. There is a desire to shift toward vapor-phase methods in order to ensure more controlled modification and more efficient reagent and solvent removal from the modified MOF material. In this work we explore how the metal precursors titanium tetrachloride (TiCl4.) and trimethylaluminum (TMA), commonly used in atomic layer deposition, react with UiO-66-NH2 MOF. Using in situ quartz crystal microbalance (QCM) and Fourier transform infrared spectroscopy (FTIR) at 150 and 250 degrees C, we find that the ALD precursors react with mu(3)-OH hydroxyl and mu(3)-O bridging oxygen groups on Zr-6 nodes, as well as oxygen from carboxylate linker groups. The reactions occur predominantly at the crystal surface at mu(3)-OH hydroxyl sites, with TiCl4 exhibiting greater diffusion into the MOF subsurface. FTIR analysis suggests that, at 150 degrees C, both TiCl4 and TMA reversibly dehydroxylate the hydroxylated UiO-66-NH2, which is accompanied by distortion of the zirconium metal clusters. Finally, we show that TiCl4 is able to react with the dehydroxylated UiO-66-NH2 structure, suggesting that TiCl4 is also able to react directly with the bridging oxygen in the metal clusters or carboxylate groups on the organic ligand. A better understanding of chemical and thermally driven MOF dehydroxylation reactions can be important for improved postsynthetic modification of MOFs.

Initial Growth Mechanisms of ZrO2 and TiO2 Thin Films Using Cycloheptatrienyl–cyclopentadienyl Heteroleptic Precursors: A Comparative Study by Density Functional Theory

Initial growth mechanism of atomic layer deposited titanium dioxide using cyclopentadienyl-type precursor: A density functional theory study

Initial Surface Reactions Mechanisms of Atomic Layer Deposition TiO<sub>2</sub><sub> </sub>Using Ti(OCH<sub>3</sub>)<sub>4</sub> and H<sub>2</sub>O as Precursors

Initial Surface Reactions Mechanisms of Atomic Layer Deposition Tio2 Using Ti(Och3)(4) and H2o As Precursors

Initial Surface Reactions Mechanisms Of Atomic Layer Deposition Tio2 On H/Si(100)-2x1 Surface

Density Functional Theory Study on Surface Reaction Mechanism of Atomic Layer Deposition of ZrO(2)on Si(100)-2 X 1

Theoretical Study on the Initial Reaction Mechanisms of Ansa-Metallocene Zirconium Precursor on Hydroxylated Si(1 0 0) Surface.

Theoretical study on the initial reaction mechanisms of ansa-metallocene zirconium precursor on hydroxylated Si(100) surface

Atomic Layer Deposition of Tio2 from Tetrakis-Dimethyl-Amido Titanium or Ti Isopropoxide Precursors and H2o

Preparation and Phase Structures of Zn–Ti–O Ternary Compounds by Atomic Layer Deposition

Room temperature atomic layer deposition of zinc titanium oxide using sequential adsorption of dimethyl zinc and tetrakis(dimethylamino)titanium

Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors

Reversible Low-Temperature Metal Node Distortion During Atomic Layer Deposition of Al2o3 and Tio2 on Uio-66-Nh2 Metal-Organic Framework Crystal Surfaces

N ew Class of Zr Precursor Containing Boratabenzene Ligand Enabling Highly Conformal Wafer-Scale Zirconium Dioxide Thin Films through Atomic Layer Deposition

Density Functional Theory Study of Initial Stage of ZrO2 Atomic Layer Deposition on Ge/Si(100)-(2×1) Surface

Surface reaction mechanisms during atomic layer deposition of zirconium oxide using water, ethanol, and water-ethanol mixture as the oxygen sources

In Situ X‐Ray Photoelectron Spectroscopy Study of Atomic Layer Deposited Cerium Oxide on SiO2: Substrate Influence on the Reaction Mechanism During the Early Stages of Growth

Quantum Chemical Study of the Initial Surface Reactions in Atomic Layer Deposition of TiN on the SiO(2) Surface.

Chemisorption of tetrakis(dimethylamino)zirconium on zirconium oxide: Density functional theory study

Initial Surface Reactions in Atomic Layer Deposition of Hfsixoy and Hfo2: A Comparative Study by Density Functional Theory

Density Functional Theory Study on the Surface Reaction Mechanism of Atomic Layer Deposited Ta2o5 on Si(100) Surfaces