Abstract:Post deposition annealing of molecular layer-deposited (MLD) hafnicone films was examined and compared to that of hafnium oxide atomic layer-deposited (ALD) films. Hafnicone films were deposited using tetrakis(dimethylamido)hafnium (TDMAH), and ethylene glycol and hafnia films were deposited using TDMAH and water at 120 °C. The changes in the properties of the as-deposited hafnicone films with annealing were probed by various techniques and then compared to the as-deposited and annealed ALD hafnia films. In situ X-ray reflectivity indicated a 70% decrease in thickness and ∼100% increase in density upon heating to 400 °C yet the density remained lower than that of hafnia control samples. The largest decreases in thickness of the hafnicone films were observed from 150 to 350 °C. In situ X-ray diffraction indicated an increase in the temperature required for crystallization in the hafnicone films (600 °C) relative to the hafnia films (350 °C). The changes in chemistry of the hafnicone films annealed with and without UV exposure were probed using Fourier transformed infrared spectroscopy and X-ray photoelectron spectroscopy with no significant differences attributed to the UV exposure. The hafnicone films exhibited lower dielectric constants than hafnia control samples over the entire temperature range examined. The CF4/O2 etch rate of the hafnicone films was comparable to the etch rate of hafnia films after annealing at 350 °C. The thermal conductivity of the hafnicone films initially decreased with thermal processing (up to 250 °C) and then increased (350 °C), likely due to porosity generation and subsequent densification, respectively. This work demonstrates that annealing MLD films is a promising strategy for generating thin films with a low density and relative permittivity.

Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors

Deposition of Y2O3 stabilized ZrO2 thin films from Zr(DPM)4 and Y(DPM)3 by aerosol-assisted MOCVD

Fabrication and Characterization of Y2O3 Stabilized ZrO2 Films Deposited with Aerosol-Assisted MOCVD

Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

Synthesis and Characterization of HfO2 and ZrO2 Thin Films Deposited by Plasma Assisted Reactive Pulsed Laser Deposition at Low Temperature

Characterization of Al2O3 and HfO2 Grown on Metal Surfaces with Thermal and Plasma Enhanced Atomic Layer Deposition

Preparation and Properties of ZrO2 and TiO2 Films and Their Nanolaminates by Atomic Layer Deposition

Amidoxime-Containing Zr and Hf Atomic Layer Deposition Precursors for Metal Oxide Thin Films

Low Temperature Formation of Higher-K Cubic Phase Hfo2 by Atomic Layer Deposition on Geox/Ge Structures Fabricated by In-Situ Thermal Oxidation

Properties of Hf0.7Zr0.3O2 thin films chemical vapor deposited using a single-source precursor of anhydrous HfxZr1−x(NO34 precursors

Structure and optical properties of Zr<sub>x</sub>Hf<sub>1-x</sub>O<sub>2</sub> films deposited by pulsed laser co-ablation of Zr and Hf targets with the assistance of oxygen plasma

Chemical, Structural, and Electrical Changes in Molecular Layer-Deposited Hafnicone Thin Films after Thermal Processing

Properties of HfAlO Film Deposited by Plasma Enhanced Atomic Layer Deposition

N ew Class of Zr Precursor Containing Boratabenzene Ligand Enabling Highly Conformal Wafer-Scale Zirconium Dioxide Thin Films through Atomic Layer Deposition

Physical properties and electrical characteristics of H2O-based and O3-based HfO2 films deposited by ALD.

Microstructures of HfOx Films Prepared via Atomic Layer Deposition Using La(NO3)3·6H2O Oxidants

Self-assembled Monolayer Resist for Atomic Layer Deposition of HfO2 and ZrO2 High-Κ Gate Dielectrics

Facing-target Mid-Frequency Magnetron Reactive Sputtered Hafnium Oxide Film: Morphology and Electrical Properties

Structure and dielectric properties of Zr-Al-O thin films prepared by pulsed laser deposition

Chemical Vapor Deposition of Zr x Ti 1-x O and Hf x Ti 1-x O Thin Films Using the Composite Anhydrous Nitrate Precursors

Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films