Abstract:The existence of a morphotropic phase boundary (MPB) inside HfO2-ZrO2 solid solution thin films has been predicted; if it exists, it provides a new path toward an ideal silicon-compatible dielectric. Herein, we investigate the structural evolution along with the dielectric and ferroelectric behaviors of differently designed HfO2-ZrO2 thin films to engineer the density of the MPB inside the film structure and consequently, enhance the dielectric properties. Polarization vs. electric field (P-E) measurements of Hf0.25Zr0.75O2 thin films reveal ferroelectric (FE)-antiferroelectric (AFE) characteristics. For this composition, the dielectric constant εr is higher than those of FE Hf0.5Zr0.5O2 and AFE ZrO2 thin films; the difference is attributed to the formation of the MPB. To increase the density of the MPB and subsequently the dielectric properties, 10 nm Hf0.5Zr0.5O2 (FE)/ZrO2 (AFE) nanolaminates were prepared with different lamina thicknesses tL. The coexistence of FE and AFE properties was confirmed by structural characterization studies and P-E measurements. The thinnest layered nanolaminate (tL = 6 Å) showed the strongest dielectric constant εr∼ 60 under a small signal ac electric field of ∼50 kV cm-1; this is the highest εr so far observed in HfO2-ZrO2 thin films. This behavior was attributed to the formation of an MPB near FE/AFE interfaces. The new design provides a promising approach to achieve an ideal high-κ CMOS-compatible device for the current electronic industry.

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