Abstract:Hafnium-based binary oxides are essential for fabricating nanoscale high-density ferroelectric memory devices. However, effective strategies to control and improve their thin-film single crystallinity and metastable ferroelectricity remain elusive, hindering potential applications. Here, using NdGaO3 (NGO) substrates with four crystalline orientations, we report a systematic study of the structural characterizations and ferroelectric properties of epitaxial Hf0.5Zr0.5O2 (HZO) films, demonstrating orientation-controlled high crystallinity and enhanced ferroelectric properties. HZO films grown on NGO(001) and NGO(110) substrates exhibit relatively low crystallinity and a significant presence of the monoclinic phase. In contrast, HZO films grown on NGO(100) and NGO(010) possess high single crystallinity and a dominant ferroelectric phase. These differences are attributed to the surface symmetry of the NGO substrate, which favors the formation of 4- or 2-fold domain configurations. Moreover, the optimized HZO films exhibit a large polarization (2Pr) of ∼50 μC/cm2, enhanced fatigue behavior up to 1011 cycles, improved retention of 2Pr ∼ 40 μC/cm2 after 10 years, and characteristic polarization switching speeds in the submicrosecond range. Our results highlight the importance of modulating the single crystallinity and ferroelectric phase fraction of HfO2-based films to enhance ferroelectric properties, further revealing the potential of epitaxial symmetry engineering.

Effect of the Hf content on the microstructure and ferroelectric properties of Hf x Zr 1− x O 2 thin films using an all-inorganic aqueous precursor solution

Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films

Composition-dependent structure and bandgaps in Hf x Zr1− x O2 thin films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Properties of Hf0.7Zr0.3O2 thin films chemical vapor deposited using a single-source precursor of anhydrous HfxZr1−x(NO34 precursors

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer

Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf 0.5 Zr 0.5 O 2 thin films

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Hf xZr 1-xO 2 films chemical vapor deposited from a single source precursor of anhydrous Hf xZr 1-x(NO 3) 4

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application

Tensile stress regulated microstructures and ferroelectric properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films

Effect of Y concentration and film thickness on microstructure and electrical properties of HfO2 based thin films

Understanding the Effect of Oxygen Content on Ferroelectric Properties of Al-Doped HfO Thin Films

Ferroelectric properties of pure ZrO2 thin films by chemical solution deposition

Ferroelectricity in the Al doped HfO2

Optimizing Annealing Process for Ferroelectric Y‐Doped HfO 2 Thin Films by All‐Inorganic Aqueous Precursor Solution

Interface Effects Induced by a Zr O 2 Seed Layer on the Phase Stability and Orientation of Hf O 2 Ferroelectric Thin Films: A First-Principles Study

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf 0.5 Zr 0.5 O 2 Films

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf0.5Zr0.5O2 Films