Abstract:A bottom-up approach starting with the development of new Hf precursors for plasma-enhanced atomic layer deposition (PEALD) processes for HfO2 followed by in situ thin-film surface characterization of HfO2 upon exposure to reactive gases via near-ambient-pressure X-ray photoelectron spectroscopy (NAP-XPS) is reported. The stability of thin films under simulated operational conditions is assessed, and the successful implementation of HfO2 dielectric layers in metal-insulator-semiconductor (MIS) capacitors is demonstrated. Among the series of newly synthesized mono-guanidinato-tris-dialkyl-amido class of Hf precursors, one of them, namely, [Hf{η2-(iPrN)2CNEtMe}(NEtMe)3], was representatively utilized with oxygen plasma, resulting in a highly promising low-temperature PEALD process at 60 °C. The new precursors were synthesized in the multigram scale and thoroughly characterized by thermogravimetric analyses, revealing high and tunable volatility reflected by appreciable vapor pressures and accompanied by thermal stability. Typical ALD growth characteristics in terms of linearity, saturation, and a broad ALD window with constant growth of 1.06 Å cycle-1 in the temperature range of 60-240 °C render this process very promising for fabricating high-purity smooth HfO2 layers. For the first time, NAP-XPS surface studies on selected HfO2 layers are reported upon exposure to reactive H2, O2, and H2O atmospheres at temperatures of up to 500 °C revealing remarkable stability against degradation. This can be attributed to the absence of surface defects and vacancies. On the basis of these promising results, PEALD-grown HfO2 films were used as dielectric layers in the MIS capacitor device fabrication exhibiting leakage current densities less than 10-7 A cm-2 at 2 MV cm-1 and permittivities of up to 13.9 without postannealing.

Characterization of Al2O3 and HfO2 Grown on Metal Surfaces with Thermal and Plasma Enhanced Atomic Layer Deposition

Metal-organic Chemical Vapor Deposition of Aluminium Oxynitride from Propylamine–dimethylaluminium Hydride and Oxygen: Growth Mode Dependence and Performance Optimization

Properties of HfAlO Film Deposited by Plasma Enhanced Atomic Layer Deposition

Atomic Layer Deposition of High Quality HfO2 Using In-Situ Formed Hydrophilic Oxide As an Interfacial Layer

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

AFM Study on the Surface Morphologies of TiN Films Prepared by Magnetron Sputtering and Al2O3 Films Prepared by Atomic Layer Deposition

Effect of Atomic Layer Deposition Growth Temperature on the Interfacial Characteristics of Hfo2/P-Gaas Metal-Oxide-Semiconductor Capacitors

PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases.

Interfacial and Electrical Characterization of HfO2/Al2O3/InAlAs Structures

Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors

Excellent Insulating Behavior Al2o3 Thin Films Grown by Atomic Layer Deposition Efficiently at Room Temperature

X-Ray Reflectometry and Spectroscopic Ellipsometry Characterization of Al2o3 Atomic Layer Deposition on Hf-Last and Nh3 Plasma Pretreatment Si Substrates

Physical properties and electrical characteristics of H2O-based and O3-based HfO2 films deposited by ALD.

Physical Properties of an Ultrathin Al 2 O 3 /HfO 2 Composite Film by Atomic Layer Deposition and the Application in Thin-Film Transistors

Growth Behavior Of Hafnium Oxide Film By Atomic Layer Deposition And Its Modulation

Effect of the Chemical Oxide Layer Thickness on the Interfacial Quality of Ald-Grown Hfo2 on Silicon

Formation mechanism and photoelectric properties of Al2O3 film based on atomic layer deposition

Atomic layer deposition of Al2O3 and HfO2 for high power laser application

Controlled Direct Growth of Al2O3-doped HfO2 Films on Graphene by H2O-based Atomic Layer Deposition.

Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition

Atomic Layer Deposition of Al2O3 Directly on 2D Materials for High‐Performance Electronics