Abstract:Atomic layer deposition (ALD) is a thin film technology with high potential in nano fabrication. There is industrial demand to produce an ALD–TiO2 thin film using a low temperature process for applications of bending electronic devices and biomaterials. TDMAT has gained the most attention as a suitable titanium source to grow an ALD–TiO2 film at extremely low temperatures. In this process, almost all published reports have focused on metal-oxide precursors. The current work investigates the effects of oxidizing agents. For the first time, a theoretical investigation was carried out on the oxidation of H2O2 and H2O on TDMAT absorbed on a silicon (100) surface during the reaction step of the ALD–TiO2 process. We simulated the oxidation process, which continued from the adsorption step of the ALD–TiO2 process, where the TDMAT was used as a titanium precursor. The cluster of the Si9H12 =O2 =Ti[N(CH3)]2 surface model was used to represent the remaining TDMAT molecule absorbed on the Si(100) substrate. The reaction mechanisms of H2O2 oxidizing on this surface were evaluated based on their reaction pathways. The reaction pathway of H2O oxidizing on this surface was calculated at the same level to compare the effect of oxidizers. The DFT at the B3LYP 6–311 G+ (2d,p) and 6–31 G(d,p) theoretical levels were used to calculate the potential energy surface and to optimize the electronic structures in this process. It was found that the reaction mechanism depended on the nature of chemical bond dissociation within the oxidizer molecules during the oxidation process. In the oxidation of H2O2, the H2O2 molecule contained O–O and O–H bonds, which were dissociated during the oxidation process, resulting in different product structures. Only the O–O bond dissociation pathway produced the TiO2 structure. The two species of TDMAT ligands at the surface were completely oxidized using a single H2O2 molecule. The H2O2 oxidation produced more –OH groups (double) compared to H2O oxidation. In H2O oxidation, the H2O molecule contained only the O–H bond within its molecule and required activation energies significantly less than for all pathways of H2O2. The HOMO–LUMO properties and IR frequency characteristics (cm−1) of the plausible product structures were discussed. The results should be useful in guiding the selection of suitable precursors for use in the co–reactant system of the ALD–TiO2 process.

Initial Surface Reactions Mechanisms Of Atomic Layer Deposition Tio2 On H/Si(100)-2x1 Surface

Initial Surface Reactions Mechanisms of Atomic Layer Deposition Tio2 Using Ti(Och3)(4) and H2o As Precursors

Initial Surface Reactions Mechanisms of Atomic Layer Deposition TiO<sub>2</sub><sub> </sub>Using Ti(OCH<sub>3</sub>)<sub>4</sub> and H<sub>2</sub>O as Precursors

Density Functional Theory Study on the Surface Reaction Mechanism of Atomic Layer Deposited Ta2o5 on Si(100) Surfaces

Quantum Chemical Study of the Initial Surface Reactions in Atomic Layer Deposition of TiN on the SiO(2) Surface.

Initial Surface Reactions in Atomic Layer Deposition of Al2O3on the Hydroxylated GaAs(001)-4 × 2 Surface

Initial Surface Reactions in Atomic Layer Deposition of Hfsixoy and Hfo2: A Comparative Study by Density Functional Theory

Reaction of tetrabutyl titanate in the adsorption layer on Si02 surface

Density Functional Theory Study on Surface Reaction Mechanism of Atomic Layer Deposition of ZrO(2)on Si(100)-2 X 1

Initial Growth Mechanisms of ZrO2 and TiO2 Thin Films Using Cycloheptatrienyl–cyclopentadienyl Heteroleptic Precursors: A Comparative Study by Density Functional Theory

Atomic Layer Deposition of Tio2 from Tetrakis-Dimethyl-Amido Titanium or Ti Isopropoxide Precursors and H2o

Atomic Layer Deposition of Hafnium Oxide from Tetrakis(ethylmethylamino)hafnium and Water Precursors

Initial growth mechanism of atomic layer deposited titanium dioxide using cyclopentadienyl-type precursor: A density functional theory study

Quantum Chemical Study of the Initial Surface Reactions of HfO2 Atomic Layer Deposition on the Hydroxylated GaAs(001)-4×2 Surface

Stepwise Mechanism and H2o-Assisted Hydrolysis in Atomic Layer Deposition of Sio2 Without A Catalyst

A theoretical study on the surface reaction of tetrakis(dimethylamino)titanium on titanium oxide

Reaction mechanism of atomic layer deposition of aluminum sulfide using trimethylaluminum and hydrogen sulfide

Hafnium oxide and zirconium oxide atomic layer deposition: initial precursor and potential side-reaction product pathways with H/Si(100)-2 x 1

Comparison of H2O2 and H2O oxidations on TDMAT absorbed on silicon(100) surface during reaction step of ALD–TiO2 process: A DFT study

Density Functional Theory Study of Initial Stage of ZrO2 Atomic Layer Deposition on Ge/Si(100)-(2×1) Surface

Surface Reaction Mechanism of Atomic Layer Deposition of Titanium Nitride Using Tetrakis(dimethylamino)titanium and Ammonia