Abstract:InxGa1-xAs/GaAs strained-layer structures containing four single quantum wells (SSQWs) were grown by molecular beam epitaxy on a (001) semi-insulating GaAs substrate with In contents of x = 0.09 and x = 0.16. The structures contained four InxGa1-xAs quantum wells with well width and growth sequence given by 20, 40, 80 and 160 angstrom and were separated by 500 angstrom GaAs layers. The optical and structural properties of the SSQW samples have been analysed by low-temperature cathodoluminescence (CL) and transmission electron microscopy. Misfit dislocations were observed in the sample with higher In content. Large-angle convergent-beam electron diffraction has been newly applied to this system as a reliable method for determining dislocation character. All misfit dislocations studied in plan-view specimens revealed dark line contrast in appropriately chosen monochromatic CL images irrespective of the dislocation character or its alpha or beta form. A simple one-to-one correlation between dislocations and dark lines was obtained. The very different well widths for InxGa1-xAs wells in the structures resulted in very different emission energies in CL experiments. It was therefore possible to deduce in which quantum well a particular dislocation segment lay by the energy of the monochromatic image which showed dark-line contrast. As a result, dislocations were traced stepping progressively from one well to another. It was also proved that most dislocations lay in the first-grown well although it was the narrowest. The implication of these results and potential applications of the experimental technique are discussed.

The Investigation Of Impurity Distributions Around An Oval Defect In Molecular-Beam Epitaxy Algaas/Gaas Single Quantum-Wells By Transmission Electron-Microscopy And Cathodoluminescence

quantum well structures grown by molecular beam epitaxy

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Impurities related micro-defects in GaSb crystal grown by LEC method

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Electron microscopy analysis of GaN/GaAs cubic heterostructure grown by MBE

Optical Investigations On Pseudomorphic: Delta-Doped Algaas/Ingaas/Gaas Quantum Wells

Observation of Focused Ion Beam-Induced Artifacts in Transmission Electron Microscopy Samples Leading to the Epitaxial Growth of AlGaSb Quantum Dots on the GaSb Substrate

The Study of Misfit Dislocations in Inxga1-Xas/Gaas Strained Quantum-Well Structures

Investigation of Defect Formation in InGaAs on GaP/Si (100) Substrates

Transmission Electron-Microscopy Analysis of Planar and Line Defects in an Al-Li-Cu Icosahedral Quasi-Crystal

Photon emission microscope analysis on surface defects of GaAs thin-film solar cells grown by molecular beam epitaxy

Atomic-column Scanning Transmission Electron Microscopy Analysis of Misfit Dislocations in GaSb/GaAs Quantum Dots

Surface Defects Induced by Impurities in MBE-grown HgCdTe

Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy

TEM Study of the Structure of GaAs on Vicinal Si (001) Surface Grown by MBE

Emission from Defects in Thin Gan Epilayers Grown on Vicinal 4H-Sic Substrates

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Tem Study Of Linear And Planar Defects In Icosahedral Al-Li-Cu

Algasb/Gasb Quantum Wells Grown on an Optimized Alsb Nucleation Layer

Structural Characterization and Elastic Strain of InGaN/GaN Multiple Quantum Wells