Abstract:We present a detailed atomic-resolution study of morphology and substrate etching mechanism in InAs/InP droplet epitaxy quantum dots (QDs) grown by metal–organic vapor phase epitaxy via cross-sectional scanning tunneling microscopy (X-STM). Two different etching processes are observed depending on the crystallization temperature: local drilling and long-range etching. In local drilling occurring at temperatures of ≤500 °C, the In droplet locally liquefies the InP underneath and the P atoms can easily diffuse out of the droplet to the edges. During crystallization, the As atoms diffuse into the droplet and crystallize at the solid–liquid interface, forming an InAs etch pit underneath the QD. In long-range etching, occurring at higher temperatures of >500 °C, the InP layer is destabilized and the In atoms from the surroundings migrate toward the droplet. The P atoms can easily escape from the surface into the vacuum, forming trenches around the QD. We show for the first time the formation of trenches and long-range etching in InAs/InP QDs with atomic resolution. Both etching processes can be suppressed by growing a thin layer of InGaAs prior to the droplet deposition. The QD composition is estimated by finite element modeling in combination with X-STM. The change in the morphology of QDs due to etching can strongly influence the fine structure splitting. Therefore, the current atomic-resolution study sheds light on the morphology and etching behavior as a function of crystallization temperature and provides a valuable insight into the formation of InAs/InP droplet epitaxy QDs which have potential applications in quantum information technologies.

Observation of Focused Ion Beam-Induced Artifacts in Transmission Electron Microscopy Samples Leading to the Epitaxial Growth of AlGaSb Quantum Dots on the GaSb Substrate

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

quantum well structures grown by molecular beam epitaxy

XeF$_2$-Enhanced Focused Ion Beam Etching and Passivation of GaSb

Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Molecular Beam Epitaxial Growth of IV–VI Multiple Quantum Well Structures on Si(111) and BaF2(111) and Optical Studies of Epilayer Heating

Artifact-free sample preparation of metal thin films using Xe plasma-focused ion beam milling for atomic resolution and in situ biasing analyses

High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots

Evolution of Micro-Structures on PbSe Buffer Layer and Self-Organization of PbTe QDs

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Detection of BiGa hetero-antisites at Ga(As,Bi)/(Al,Ga)As interfaces

Effect of gallium termination on InGaAs wetting layer properties in droplet epitaxy InGaAs quantum dots

Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots

Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters

The Investigation Of Impurity Distributions Around An Oval Defect In Molecular-Beam Epitaxy Algaas/Gaas Single Quantum-Wells By Transmission Electron-Microscopy And Cathodoluminescence

Molecular Beam Epitaxy Growth of Gaasbi/Gaas/Algaas Separate Confinement Heterostructures

Comparing InGaAs and GaAsSb Metamorphic Buffer Layers on GaAs Substrates for InAs Quantum Dots Emitting at 1.55μm

Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi

Structural Investigations of Colloidal Semiconductor Nanocrystal Heterostructures: Faceting and Epitaxy

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots