Abstract:This thesis describes an extensive study of the optical properties of In(Ga)As/Ga(Al)As quantum dots, both singularly and in laser devices. For the optical characterisation, the spectroscopic techniques of photoluminescence (PL), photoluminescence-excitation (PLE) and electroluminescence (EL) have been used. Additionally, for studying submicron structures, sophisticated micro-PL techniques allowed excitation, and detection, of a single quantum dot. A variety of special growth and fabrication techniques were used to isolate a single quantum dot from the rest of the ensemble. Firstly, a submicron mesa that isolated a single quantum dot was fabricated using e-beam lithography and dry etching techniques. Excitation intensity and wavelength dependence of the emission provided information about the nature of the exciton complexes in the dot and the absorption and relaxation of carriers in the structure. The linewidth of the single exciton, and the variation with temperature, was measured. Secondly, samples consisting of a single layer of InGaAs quantum dots incorporated within the intrinsic region of a GaAs/AlGaAs Metal-Insulator-Semiconductor type Schottky structure allowed sequential dot charging via variation of the gate bias. Both n- and p- type samples, grown under similar conditions, were investigated. Single quantum dots were probed through submicron apertures opened in the top metal contact using electron beam lithography and dry etching. The emission undergoes several pronounced changes as additional carriers are sequentially loaded into the dot. The results reveal direct information regarding Coulomb interaction and correlation effects in dots containing a controlled number of excess electrons (up to four) or holes (up to two). Magneto- optical results reveal further information about the few-particle wave functions. A detailed study of the device performance and physical processes in In(Ga)As- Ga(Al)As self-assembled quantum dot lasers showed that these lasers offer several potential advantages over conventional quantum well lasers including low threshold current density, temperature insensitive threshold current density and high differential gain. Device performance (threshold current density and its variation with temperature) has been studied as a function of a number of parameters, including dot density, dot composition and dot confinement potential. The application of large (<14T) magnetic fields has been used to study carrier transport and dot carrier capture effects. When applied along the growth axis, such fields result in an increase in the threshold current density and a decrease in the external quantum efficiency. These effects are attributed to inhibited inplane carrier transport resulting in an increase in the carrier capture efficiency by non-lasing dots. Spontaneously emitted light, recorded via small windows formed in the top metallic contact, has been studied as a function of injection current and temperature. Analysis of this data provides information on non-radiative loss mechanisms and dot carrier dynamics.

Effect of gallium termination on InGaAs wetting layer properties in droplet epitaxy InGaAs quantum dots

High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots

Wetting layers effect on InAs/GaAs quantum dots

Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots

Influence of Ga(Al)As substrates on surface morphology and critical thickness of InGaAs quantum dots

Optical properties of InGaAs quantum dots formed on InAlAs wetting layer

Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters

Surface modification on InAs wetting layer by in-situ pulsed laser and the effets on quantum dot growth

Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InAlAs Wetting Layer

Optical characterisation of III-V semiconductor quantum dots and quantum dot structures

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Effect of GaN Barrier Layer Thickness on Morphology and Optical Properties of Multilayer InGaN Quantum Dots

Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer

Quantum Dots: Growth of InAs Quantum Dots on GaAs (511)A Substrates: the Competition Between Thermal Dynamics and Kinetics (small 31/2016)

Formation conditions for InAs/GaAs quantum dot arrays by droplet epitaxy under MOVPE conditions

Effect of in X Ga 1− X As Interlayer on Surface Morphology and Optical Properties of GaSb/InGaAs Type-II Quantum Dots Grown on InP (100) Substrates

Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots

Atomic-Scale Characterization of Droplet Epitaxy Quantum Dots

Inter-Layer Energy Transfer Through Wetting-Layer States in Bi-Layer Ingaas/Gaas Quantum-Dot Structures with Thick Barriers

Photoluminescence studies of wetting layer in InAs/GaAs self-organized quantum dot structures