Abstract:In x Ga 1−x As/In y Ga 1−y As strain-balanced quantum well cells (QWCs) have been shown to be beneficial for photovoltaic applications in particular to extend the light absorption edge of a single-junction cell toward the near infrared with a lower reduction of the open-circuit voltage compared to a single band-gap cell. The strain-balancing condition ensures that the multi-quantum well as a whole does not relax. However, if the mismatch between wells and barriers exceeds a critical limit, the structure becomes vulnerable to morphological or compositional fluctuations, which can lead to a local structural breakdown with the generation of extended defects of a completely different nature from misfit dislocations. In this work, we investigated a series of strain-balanced InGaAs QWCs grown on InP for thermophotovoltaic applications by means of electron-beam-induced current (EBIC) and cathodoluminescence (CL) measurements. Despite being electrically active, these defects appear to have a minor impact on the dark current of the cells but cause a drop of the photocurrent at relatively low forward bias voltage. The higher carrier collection efficiency revealed both by EBIC and CL at the boundaries of the defects suggests that a notch in the valence band edge limits the collection of holes generated in the MQW and the energy states, induced by the defects inside the energy gap, assist the tunneling of holes through the notch. At zero bias, the overall reduction of the collection efficiency is of the order of a few percent but the rate of recombination of photogenerated carriers increases dramatically with increasing forward-bias voltage as the junction built-in field drops more rapidly where the density of in-gap states is higher.

Photon emission microscope analysis on surface defects of GaAs thin-film solar cells grown by molecular beam epitaxy

Visualizing localized, radiative defects in GaAs solar cells

Photon-induced Defects and Dynamics of Photogenerated Carriers in Cu(In,Ga)Se2 Thin Film Solar Cells

Defect Related Photoluminescence Emission from Etched GaAs Microstructure Introduced by Electrochemical Deposition

Detecting the Micro-Defects in the GaAs Materials by Time Resolved Emissions

Defects analysis of radiation damage mechanism for IMM triple-junction solar cell under 1 MeV electron irradiation

Electron Irradiation Effects and Defects Analysis of the Upright Metamorphic Four‐Junction (UMM4J) Solar Cells

Analysis of leakage current in GaAs micro-solar cell arrays

The Investigation Of Impurity Distributions Around An Oval Defect In Molecular-Beam Epitaxy Algaas/Gaas Single Quantum-Wells By Transmission Electron-Microscopy And Cathodoluminescence

Electron microscopy analysis of GaN/GaAs cubic heterostructure grown by MBE

1 MeV electron irradiation effect and damage mechanism analysis of flexible GaInP/GaAs/InGaAs solar cells

Electron-Beam-Induced Current and Cathodoluminescence Characterization of Ingaas Strain-Balanced Multiquantum Well Photovoltaic Cells

Size-dependent sidewall defect effect of GaN blue micro-LEDs by photoluminescence and fluorescence lifetime imaging

Tailored Band Structure of Cu(In,Ga)Se2 Thin-Film Heterojunction Solar Cells: Depth Profiling of Defects and the Work Function.

Investigation of Defect Formation in InGaAs on GaP/Si (100) Substrates

Defect Physics of the Quasi-Two-dimensional Photovoltaic Semiconductor GeSe

Surface Morphology of GaAs/In0.3Ga0.7As in an Elastic Field of Static Point Defects

Surface defect detection of solar cells based on Fourier single-pixel imaging for removal of substrates interference

Emission from Defects in Thin Gan Epilayers Grown on Vicinal 4H-Sic Substrates

Impurities related micro-defects in GaSb crystal grown by LEC method

Deep-level Defects in Gallium Oxide