Abstract:TSV (Through Silicon Via) is the key component in fabricating 3D ICs and device packaging which has the advantages of lower power consumption, higher integration density and shorter interconnection length. TSV is a composite structure fabricated by process filling electroplated copper into etched silicon via, it consists of Cu/TaiTaN/SiO2/Si multiple interfaces with roughness formed in the via etching process. In the TSV structure, more difference in coefficient of thermal expansion between copper and silicon leads to high thermal stress and related reliability issues, but fewer TSV EM works have been reported. Thus, TSV test structure with M1 of aluminum and backside redistribution layer of copper was designed and tested to evaluate EM reliability performance. Generally, the void nucleation and growth induce resistance change, and then impact expected metal interconnection performance. In our study, an unfamiliar EM failure mechanism of TSV was observed. No typical void was found, but barrier damage and Cu diffusion were observed in test. From failure analysis result, it is considered that EM failure mechanism of TSV consists of several major stages, including (1) barrier damage, (2) Cu diffusion and (3) CuAl alloy form. With the CuAl alloy formed, resistance of metal interconnection increases, so it induces EM failure.

Electromigration Induced Stress in Through-Silicon-via (TSV)

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Electrothermal modelling of through silicon via (TSV) interconnects

Multi-physics characterization of through silicon vias (TSV) in the presence of a periodic EMP

A new prediction methodology for electromigration-induced solder degradation in a WL-CSP system

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Strain Gradient Finite Element Analysis of Size Dependence of Thermal Stresses in Through-Silicon Vias (Tsvs)

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

The electromigration failure mechanism for TSV process

Interfacial Stress in Through Silicon Vias

Finite Element Stress Analysis Of 3d Tsv Stack Subject To Large Temperature Loading

Numerical and Experimental Investigation of Thermomechanical Deformation in High-Aspect-Ratio Electroplated Through-Silicon Vias

Finite Element Analysis of the Thermal-Hygroscopic Stress of the Through Silicon Vias(TSV) Interconnect Structure

Comparison of the Time-Dependent Physical Processes in the Electromigration of Deep Submicron Copper and Aluminum Interconnects

Experimental and Finite Elemental Investigations on Residual Stress of TSV

Reliable Design of Electroplated Copper Through Silicon Vias