Abstract:Nowadays, the microelectronics industry broadly uses the flipchip technology to enhance the packaging density. However, the small size and the unique geometry of the flip-chip solder joints induce the electromigration (EM) reliability issue. In this study, a Pb-free solder joints (SAC1205) was EM tested by a current of 7.5×10 3 A/cm 2 . During the tests, a three-dimensional (3D) X-ray laminography method was applied to in-situ observe the microstructure evolution. The laminography method allows for the non-destructive observation and provides the quantitative analysis among three dimensions. After EM testing for 650 hr, a new EM failure mechanism was found rather than the well-known models, the pancake void propagation and the under-bump-metallization dissolution. According to the laminography images at different testing stages, many voids simultaneously formed and grew during the entire procedure of testing. Most of them distributed in the current crowding region, but a few also located in the low-current-density region. As the testing time increased, voids grew bigger, coalesced with each other, and finally became large voids which occupied the interface and caused EM failure. The finite-element (FE) method was also applied to analyze the interplay between the microstructure evolution and current density redistribution. A series of 3D FE models were built based on the laminography images at different testing stages. The current density distribution from the FE analysis indicates that the multiple voids formation does not affect the global current density distribution until the voids merged together and became very large voids in the late stage of EM testing. The relieving of the global current crowding in the pancake void model was not found in this new EM failure mechanism. It was the local current crowding found in the new model that responsible for the EM retardation.

A new prediction methodology for electromigration-induced solder degradation in a WL-CSP system

Dynamic Substructure Method for Prediction of Solder Joint Reliability of IC Package under Drop Test

Design of experiments of electromigration reliability for solder joints of a wafer level chip scale package

Prediction of Electromigration Failure of Solder Joints and Its Sensitivity Analysis

Predicting fatigue life of Solder joint with submodel method for a BGA package

Electromigration Time to Failure Simulation for Solder Bumps of a Chip Scale Package

Electromigration prediction and test for 0.18μm power technology in wafer level reliability

MODELING OF ELECTROMIGRATION FAILURE PREDICTING FOR FCBGA SOLDER BUMP UNDER MULTI-PHYSICAL FIELD LOADS

Prediction Of Electromigration Induced Voids And Hillock For Ic Interconnect Structures

Numerical simulation of electromigration failure in IC interconnect structures

Electromigration Prediction And Test For 0.18 Mu M Power Technology In Wafer Level Reliability

Prediction of electromigration lifetime of lead-free solder joints

Study of Electromigration-Induced Formation of Discrete Voids in Flip-Chip Solder Joints by In-Situ 3D Laminography Observation and Finite-Element Modeling

Comparison of the Time-Dependent Physical Processes in the Electromigration of Deep Submicron Copper and Aluminum Interconnects

Modeling of electromigration of the through silicon via interconnects

Phase-Field-Crystal Model for Electromigration in Metal Interconnects.

Electromigration Simulation for Metal Lines

The Effect of Atomic Density Gradient in Electromigration

Electromigration Mechanism of Failure in Flip-Chip Solder Joints Based on Discrete Void Formation

Electromigration reliability evaluation in FCBGA package based on orthogonal experimental design

A NEW ALGORITHM FOR ELECTROMIGRATION FAILURE ANALYSIS OF METAL INTERCONNECTS