A Physics-Based Electromigration Reliability Model for Interconnects Lifetime Prediction

Cai Linlin,Chen Wangyong,Kang Jinfeng,Du Gang,Liu Xiaoyan,Zhang Xing
DOI: https://doi.org/10.1007/s11432-020-3140-4
2021-01-01
Science China Information Sciences
Abstract:Dear editor, When the technology node scales down to 14 nm,the back-end-of-line (BEOL) in IC design faces the more serious chal-lenges[1,2].The high-density integration induced by the technology innovation increases the number of interconnect-ing layers and reduces the metal pitch,making the place-ment and routing of BEOL more difficult.Meanwhile,due to the size effects,the maximum tolerable current density in narrow dimensions of metal lines can no longer meet the re-quirements of driving current density in interconnects.The high current density and rapidly increasing resistivity add a large power dissipation burden to interconnects,which accel-erates the reliability degradation of metal lines.Currently,the reported work has shown the exploration of electromi-gration (EM) reliability in advanced technology nodes by using the empirical prediction equations[3]or the finite ele-ment methods (FEM)[4].However,the conventional meth-ods without the consideration of microscopic physical ef-fects would overestimate the time-to-failure (TTF) of EM.Although the FEM-based simulation guarantees the rela-tively high accuracy of EM assessment,the simulated pro-cess would be time-consuming,which is not acceptable for the large-scale prediction of BEOL.
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