Abstract:This paper describes a new and simple approach to accurately characterize the transient self-heating effect in Si-Ge Heterojunction Bipolar Transistors (HBTs), based on pulse measurements and verified through transient electro-thermal simulations. The measurements have been carried out over pulses applied at Base and Collector terminals simultaneously and the time response of Collector current increase due to self-heating effect are obtained. Compared to previous approach, a complete calibration has been performed including all the passive elements such as coaxial cables, connectors and bias network. Furthermore, time domain junction temperature variations, current of heat flux and lattice temperature distribution have been obtained numerically by means of 3D electro-thermal device simulations. The thermal parameters extracted from measurements using HiCuM HBT compact model have been verified with the parameters extracted from electro-thermal transient simulation. It has been shown that, the standard R-C thermal network is not sufficient to accurately model the thermal spreading behavior and therefore a recursive network has been employed which is more physical and suitable for transient electro-thermal modeling.

Electro-Thermal analysis of SiGe HBT under HPM Injection

Experiments and Comparisons of Power to Failure for SiGe-Based Low-Noise Amplifiers under High-Power Microwave Pulses

Electro-thermal-stress interaction of GaN HEMT breakdown induced by high power microwave pulses

Comparisons of power to failure for low-noise amplifiers under high-power microwave pulses

Analysis of Electro-Thermal-Stress Failure of the Ldmos Fet under Hpm Pulses

Electro-Thermal-Stress analysis of a LDMOS FET Breakdown under High Power Microwave pulses

Experimental Investigation and Analysis of the LDMOS FET Breakdown Under HPM Pulses

Analysis of the Thermal Effects of Gaasfets under the High-Power Electromagnetic Pulses

Investigation on Failure Mechanisms of GaN HEMT Caused by High-Power Microwave (HPM) Pulses

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Failure Mechanisms Analysis in GaN HEMTs under High-Power Microwave Pulses

Investigating A Thermal Breakdown Model and Experiments on A Silicon-Based Low-Noise Amplifier under High-Power Microwave Pulses

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Electro-thermal Analysis of a 65 nm Channel MOSFET Under The HPEMP

Degradation of SiGe HBT with reactor pulse neutron and gamma rays irradiation

Electro-thermal-stress Analysis of AlGaN/GaN HEMTs Breakdown under Intentional EMI

Modeling of Heat Source Inside MOSFET under HPEMP Based on Electro-thermal Analysis

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT