Abstract:Power electronic systems based on gallium nitride (GaN) devices are expected to significantly reduce the power loss and increase the operating frequency. This makes GaN devices very promising for next-generation medium-low voltage power electronics, like applications in electric vehicles, 5G communication, lasers, and fast charge. However, reliability issues are still an obstacle to the widespread application of p-GaN high electron mobility transistor (HEMT). It is of great significance to study the reliability of p-GaN HEMT which suffers unclamped inductive switching (UIS) shock. This work reveals the UIS failure mechanism of commercial 200V p-GaN HEMT. During entire UIS process, the p-GaN HEMT does not consume the energy stored by the load inductance. The energy transferred from the load inductance makes the electric field of the passivation layer under the source field plate (SFP) rise rapidly, causes the catastrophic breakdown of the passivation layer. Once the maximum drain-source voltage (VDS, max) exceeds the critical peak voltage (Vpeak), the UIS failure occurs. The ionized traps in passivation layer and hot carrier injection caused by high electric field lead to the formation of a penetration current path between SFP and AlGaN barrier layer. This work provides a new UIS failure mechanism of 200V p-GaN HEMT.

Failure Mechanisms Analysis in GaN HEMTs under High-Power Microwave Pulses

Electro-thermal-stress interaction of GaN HEMT breakdown induced by high power microwave pulses

Investigation on Failure Mechanisms of GaN HEMT Caused by High-Power Microwave (HPM) Pulses

Experiments and Comparisons of Power to Failure for SiGe-Based Low-Noise Amplifiers under High-Power Microwave Pulses

Inverse Piezoelectric and Trap Effects with Temperature Dependence in AlGaN/GaN HEMTs under Narrowband Microwave Pulses

Inverse Piezoelectric Effect in a GaN HEMT Under HPM Pulses

Analysis of the Thermal Effects of Gaasfets under the High-Power Electromagnetic Pulses

Comparisons of power to failure for low-noise amplifiers under high-power microwave pulses

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Analysis of Electro-Thermal-Stress Failure of the Ldmos Fet under Hpm Pulses

Recent Progress of Physical Failure Analysis of GaN HEMTs

Failure Analysis of 200V P-Gan HEMT under Unclamped Inductive Switching Conditions

Electro-Thermal analysis of SiGe HBT under HPM Injection

Study of the Breakdown Failure Mechanisms for Power AlGaN/GaN HEMTs Implemented Using a RF Compatible Process

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Electro-thermal-stress Analysis of AlGaN/GaN HEMTs Breakdown under Intentional EMI

Trap Dynamic Detection of GaN HEMT under Repetitive Short Circuit Degradation.

Mechanism of AlGaAs/InGaAs pHEMT Nonlinear Response Under High-Power Microwave Radiation

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs under Electrostatic Discharge Stress

Study on Thermal Transient Measurement Method and Mechanism of GaN HEMT Power Devices