Abstract:The junction temperature is a main factor affecting the device performance and reliability. The thermal resistance is usually used to calculate the junction temperature. However, the thermal resistance is not constant under different operating conditions. In this work, we examine the high-speed electron mobility transistor (HEMT) from the CREE Company to investigate its thermal resistances under different case temperatures and dissipation powers. To avoid the self-oscillating phenomenon of the HEMT device, a circuit is designed to prevent the self-oscillating in experiment. First, the temperatures of the active region of the GaN HEMT device are measured by the infrared image method under different dissipation powers (including 2.8, 5.6, 8.4, 11.2, and 14 W) and different case temperatures, respectively. Then according to the result of infrared image method, the simulation model is set up by using the Sentaurus TCAD. From the final optimized model, we extract the device junction temperature and calculate the thermal resistance. It is expected to ascertain the characteristic of the thermal resistance and compare it with the result from the infrared image method. It is found that as the device case temperature increases from 80 ℃ to 130 ℃, the thermal resistance changes from 5.9 ℃/W to 6.8 ℃/W, i.e., it is increased by 15%. When the power increases from 2.8 W to 14 W, the thermal resistance changes from 5.3 ℃/W to 6.5 ℃/W, i.e., it is increased by 22%. This phenomenon is mainly attributed to the changes of the thermal conductivity of device materials. According to the formula for the coefficient of the thermal conductivity of nonmetallic material SiC, the phonon scattering rate becomes larger with the increase of temperature. Thus, the phonon mean free path can decrease by reducing the average freedom time. Finally, the coefficient of thermal conductivity becomes smaller. It was reported by Kotchetkov et al. (Kotchetkov D, Zou J, Balandin A A, Florescu D I 2001 Appl. Phys. Lett. 79 4316) that the coefficient of thermal conductivity of GaN becomes smaller under high temperature. All of these have an effect on the heat dissipation of the device, which will cause the thermal resistance to increase. Based on the result from the infrared image method and TCAD simulation, the changing characteristic of the thermal resistance is obtained, thereby reducing the errors in the calculation of the junction temperature.

Study on Thermal Transient Measurement Method and Mechanism of GaN HEMT Power Devices

Test Methods and Principles of Thermal Resistance for GaN HEMT Power Devices

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Electro-thermal-stress interaction of GaN HEMT breakdown induced by high power microwave pulses

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

High Speed Transient Thermal Simulation of GaN HEMT Devices

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

Experimental Study and Characterization on the Thermo-Electro Multiphysics Coupling Failure of GaN HEMTs Under High-Power Microwave Pulse

B13-P-01Temperature Characterization of Self-heating in GaN-based Transistors by Cathodeluminescence Spectroscopy

Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance

Automatic In-Situ Measurement of Thermal Resistance for GaN HEMTs

Steady-State Temperature-Sensitive Electrical Parameters' Characteristics of GaN HEMT Power Devices

Measurement of Piezoresistance Coefficient Based on GaN HEMT Micro-Accelerometers

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Influence of Power Dissipation and Case Temperature on Thermal Resistance of Algan/Gan High-Speed Electron Mobility Transistor

Junction Temperature Measurement for HEMT Devices with Small Size Gate

Research on Failure Analysis and Method of Gan-Based Hemts

Characterization of Self-Heating in GaN High Electron Mobility Transistors Using Channel Resistance Measurement

Evaluation and Analysis of Temperature-Dependent Dynamic $r_{{{\mathrm{ds}}},{{\mathrm{on}}}}$ of GaN Power Devices Considering High-Frequency Operation

Research and Application of Temperature-sensitive Characteristics of Gate Parameters in GaN high electron mobility transistors

Evaluation of Thermal Resistance Constitution for Packaged Algan/Gan High Electron Mobility Transistors by Structure Function Method