Abstract:Long-term ON-state and OFF-state high-electric-field stress results are presented for unpassivated GaN/AIGaN/GaN high-electron-mobility transistors on SiC substrates. Because of the thin GaN cap layer, devices show minimal current-collapse effects prior to high-electric-field stress, despite the fact that they are not passivated. This comes at the price of a relatively high gate-leakage current. Under the assumption that donor-like electron traps are present within the GaN cap, two-dimensional numerical device simulations provide an explanation for the influence of the GaN cap layer on current collapse and for the correlation between the latter and the gate-leakage current. Both ON-state and OFF-state stresses produce simultaneous current-collapse increase and gate-leakage-current decrease, which can be interpreted to be the result of gate-drain surface degradation and reduced gate electron injection. This study shows that although the thin GaN cap layer is effective in suppressing surface-related dispersion effects in virgin devices, it does not, per se, protect the device from high-electric-field degradation, and it should, to this aim, be adopted in conjunction with other technological solutions like surface passivation, prepassivation surface treatments, and/or field-plate gate.

Electro-thermal-stress Analysis of AlGaN/GaN HEMTs Breakdown under Intentional EMI

Electro-thermal-stress interaction of GaN HEMT breakdown induced by high power microwave pulses

Electro-Thermal-Stress analysis of a LDMOS FET Breakdown under High Power Microwave pulses

Investigation on Failure Mechanisms of GaN HEMT Caused by High-Power Microwave (HPM) Pulses

Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Analysis of Electro-Thermal-Stress Failure of the Ldmos Fet under Hpm Pulses

Electrothermal breakdown of an intentional electromagnetic pulse injected into Ku-band gaas Mesfet-based low noise amplifier(LNA)

Analysis of the Thermal Effects of Gaasfets under the High-Power Electromagnetic Pulses

Experimental Investigation and Analysis of the LDMOS FET Breakdown Under HPM Pulses

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Investigation on conductive electromagnetic pulse (EMP) effects on the breakdown of GaAs MESFET-built power amplifiers (PA)

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Stress Reliability Study of GaN HEMT Devices

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Recent Progress of Physical Failure Analysis of GaN HEMTs

Measurement of Piezoresistance Coefficient Based on GaN HEMT Micro-Accelerometers

Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

Electro-Thermal Simulation of GaN HEMT by Finite Element Method