Abstract:In this paper, simulation modeling was carried out using Sentaurus Technology Computer-Aided Design. Two types of high electron mobility transistors (HEMT), an AlGaN/GaN/AlGaN double heterojunction and AlGaN/GaN single heterojunction, were designed and compared. The breakdown characteristics and damage mechanisms of the two devices under the injection of high-power microwaves (HPM) were studied. The variation in current density and peak temperature inside the device was analyzed. The effect of Al components at different layers of the device on the breakdown of HEMTs is discussed. The effect and law of the power damage threshold versus pulse width when the device was subjected to HPM signals was verified. It was shown that the GaN HEMT was prone to thermal breakdown below the gate, near the carrier channels. A moderate increase in the Al component can effectively increased the breakdown voltage of the device. Compared with the single heterojunction, the double heterojunction HEMT devices were more sensitive to Al components. The high domain-limiting characteristics effectively inhibited the overflow of channel electrons into the buffer layer, which in turn regulated the current density inside the device and improved the temperature distribution. The leakage current was reduced and the device switching characteristics and breakdown voltage were improved. Moreover, the double heterojunction device had little effect on HPM power damage and high damage resistance. Therefore, a theoretical foundation is proposed in this paper, indicating that double heterojunction devices are more stable compared to single heterojunction devices and are more suitable for applications in aviation equipment operating in high-frequency and high-voltage environments. In addition, double heterojunction GaN devices have higher radiation resistance than SiC devices of the same generation.

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Electro-thermal-stress interaction of GaN HEMT breakdown induced by high power microwave pulses

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Analysis of the Thermal Effects of Gaasfets under the High-Power Electromagnetic Pulses

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

Experiments and Comparisons of Power to Failure for SiGe-Based Low-Noise Amplifiers under High-Power Microwave Pulses

Measurement of Piezoresistance Coefficient Based on GaN HEMT Micro-Accelerometers

Investigation on Failure Mechanisms of GaN HEMT Caused by High-Power Microwave (HPM) Pulses

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Damage Effects and Mechanisms of High-Power Microwaves on Double Heterojunction GaN HEMT

Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Mechanism of AlGaAs/InGaAs pHEMT Nonlinear Response Under High-Power Microwave Radiation

Recent Advances in GaN‐Based Power HEMT Devices

Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect

Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses

Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

Research on the Gunn Oscillation Effect of GaN HEMT with Field Plate Structure in the Terahertz Frequency Band

Experimental study of the Single Event Effects in E-mode GaN HEMT with Heavy Ion Irradiation

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Optimization of Two-Dimensional Electron Gases and I–V Characteristics for AlGaN/GaN HEMT Devices