Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model for the metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression. Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-/spl mu/m effective gate length and the accuracy of the model are demonstrated.

Threshold Voltage Model for Deep-Submicrometer MOSFET's

Threshold Voltage Model for MOSFETs with High-K Gate Dielectrics

Fringe-Induced Barrier Lowering (fibl) Included Sub-Threshold Swing Model for Double-Gate Mosfets

Threshold Voltage Modeling of Deep-Submicron Double-Gate Fully-Depleted SOI MOSFET

Analysis of Threshold Voltage Decreasing for Double-Gate and Surrounding-Gate MOSFET's

Analytical Modeling of Threshold Voltage for Double Gate MOSFET

The Influence of Tunneling Effect and Inversion Layer Quantization Effect on Threshold Voltage of Deep Submicron Mosfets

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain

Electric Potential and Threshold Voltage Models for Double-Gate Schottky-barrier Source/drain MOSFETs

A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET

Threshold Voltage Model of Short-Channel FD-SOI MOSFETs With Vertical Gaussian Profile

A 2D Analytical Model for SCEs in MOSFETs with High-K Gate Dielectric

A Semi-Empirical Analytic Model for Threshold Voltage Instability in MOSFETs with High-Kgate Stacks

MOS Structure Threshold Voltage Model by Rigorously Considering Quantum Mechanical Effect

A Physical Threshold Voltage Model of Nanoscale Ultra-thin Body Ultra-thin Box SOI MOSFETs with a Gaussian Doping Profile

MOS device threshold voltage model considering quantum mechanical effect including multi-subband occupation

Quantum Mechanical Effects on Deep-Submicron MOSFET Subthreshold Characteristics

Threshold Voltage Model of Total Ionizing Irradiated Short-Channel FD-SOI MOSFETs with Gaussian Doping Profile

2D Threshold Voltage Model of DMOS

A new deduction of the threshold voltage for short-channel FDSOI MOSFET's using parabolic potential approach