Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model for the metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression. Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-/spl mu/m effective gate length and the accuracy of the model are demonstrated.

Threshold Voltage Modeling of Deep-Submicron Double-Gate Fully-Depleted SOI MOSFET

A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET

Analytic subthreshold slope model for deep-submicrometer fully depleted SOI MOSFET's

Analytical Modeling of Threshold Voltage for Double Gate MOSFET

Analytic threshold-voltage model for fully-depleted SOI MOSFET

Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET

Quasi-two-dimensional Subthreshold Current Model of Deep Submicrometer SOI Drive-in Gate Controlled Hybrid Transistors with Lateral Non-Uniform Doping Profile.

Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain

Electric Potential and Threshold Voltage Models for Double-Gate Schottky-barrier Source/drain MOSFETs

Fully depleted short-channel SOI LDD/LDS MDSFET model for VLSI circuits analysis

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

New physical I-V model of deep-submicron FD SOI MOSFETs for analogue/digital circuit simulation

Compact I-V Model for Sub-100nm Bulk Silicon MOSFETs

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

Quantum Mechanical Effects on Deep-Submicron MOSFET Subthreshold Characteristics

A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors

MOS device threshold voltage model considering quantum mechanical effect including multi-subband occupation

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

Analysis of Threshold Voltage Decreasing for Double-Gate and Surrounding-Gate MOSFET's

A Rigorous Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-On-Insulator (Utb-Soi) Mosfets

An Analytical Potential Model of Double-Gate MOSFETs with Schottky Source/Drain