Characterization of Interface States in A-Si : H/c-Si Heterojunctions by an Expression of the Theoretical Diffusion Capacitance

C. L. Zhong,R. H. Yao,K. W. Geng

DOI: https://doi.org/10.1088/0022-3727/43/49/495102

2010-01-01

Journal of Physics D Applied Physics

Abstract:Capacitance spectroscopy under illumination and at a forward bias close to the open-circuit voltage (V oc) has recently been proposed to characterize interface states in a-Si : H/c-Si heterojunctions, and the interface defect density, D it, is estimated from the simulations of capacitance. In this paper, the theoretical diffusion capacitance, C D, is presented for measurement to directly characterize the interface states. By solving the excess minority carrier density in c-Si when interface states are introduced, the expression of C D is developed as a function of D it, the excess minority carrier density out of c-Si depletion and diffusion regions, Δn, and the carrier diffusion lengths in c-Si. C D decreases with increasing D it since the interface states act as recombination centres to decrease the excess carrier density in c-Si. The measurement is sensitive to D it down to 1010 cm−2 eV−1. Accordingly, in the measurement of Δn and the carrier diffusion lengths in c-Si, the interface states can be characterized directly and accurately by the theoretical diffusion capacitance.