Abstract:The characterization of defects in semiconductor materials and devices is crucial for enhancing the performance and reliability of semiconductor products. This tutorial review focuses on Deep Level Transient Spectroscopy (DLTS) as the primary analytical tool, thoroughly discussing its distinct advantages in deep-level defect characterization. However, it is unable to reveal the concentration-depth distribution of deep-level defects, neglects the dependency of carrier emission rates on the electric field, and fails to accurately identify defect structures. To overcome these limitations, two enhanced DLTS techniques have been developed to extend the capabilities of DLTS. These enhancements include the utilization of graded fill pulse technology to accurately map defect distributions at various depths within devices, facilitating individual defect characterization across different layers of multilayered structures; the application of varying electric field strengths to samples to delve into the intricate physical mechanisms of defects during carrier emission processes; and the adjustment of the duration of electric pulse injection to monitor signal growth trends, deducing the microstructure of defects. The paper integrates research findings from a wide array of field experts, meticulously outlines a description of how to obtain the depth distribution of defect concentration in devices, furnishes quantitative criteria for both the Poole-Frenkel effect and phonon-assisted tunneling mechanisms of carrier emission, and provides specific examples for distinguishing between interface states/bulk defects and point defects/extended defects. This enhances both the theoretical and practical knowledge in this field. The advanced DLTS techniques outlined provide crucial guidance for defect characterization and performance optimization in semiconductor devices with new structures and materials.

Characterization of Fast Diffusing Charged Defects in Semiconductors

Investigation Of Fast Diffusing Impurities In Silicon By A Transient Ion Drift Method

Determination of the Copper Diffusion-Coefficient in Silicon from Transient Ion-Drift

Defect Reactions In Copper-Diffused And Quenched P-Type Silicon

Numerical Fitting of Transient Decays in the High Defect Density Limit

Characterization of Interface States in A-Si : H/c-Si Heterojunctions by an Expression of the Theoretical Diffusion Capacitance

First-principles Study of Copper Contamination in Silicon Semiconductor

Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor

Characterization of deep-level defects in highly-doped silicon with asymmetric structure by transient capacitance spectroscopy

Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors

Intrinsic Charged Defects and Lithium-Ion Transport Mechanisms in CdPS3

Defect-State Transition Associated Hole Dynamics in Cuprous Iodide Nanosheets

Fast Diffusion Mechanism of Silicon Tri-interstitial Defects

To define nonradiative defects in semiconductors: An accurate DLTS simulation based on first-principle

First-principles Studies of Charged Defect States in Intrinsic Ferromagnetic Semiconductors: the Case of Monolayer CrI3

Characterization Study of Deep-Level Defect Spatial Distribution, Emission Mechanisms, and Structural Identification

Copper diffusivity in silicon: A re-examination

Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon

First-principles ionized-impurity scattering and charge transport in doped materials

Quantum spin probe of single charge dynamics

Electrometry by optical charge conversion of deep defects in 4H-SiC