Abstract:Copper (Cu) has been widely used as interconnect materials in semiconductor industry, due to its advantages of high electrical, thermal conductivities, good electro-migration resistance and low cost. Since Cu is very reactive, contamination like physical diffusion from Cu to silicon (Si) and the chemical combination between Cu and Si is commonly observed and detrimental for Si semiconductor devices. Besides experimental study of the interaction between Cu and Si at macro scale, the physical diffusion and chemical combination also need to be understood at atomic level. Based on density functional theory (DFT), a crystal structure of Cu/Si heterojunction has been established to study the Cu/Si interfacial diffusion mechanism, including the diffusibility of vacancy and interstitial diffusion. No energy barrier exists when vacancy located at the top site, and diffusion from outside to bridge site is also possible by overcoming a relative low energy barrier. The occurrence of interstitial diffusion is also proved, but the energy barrier is higher than that of vacancy diffusion. The deeper of interstitial diffusion, more energy is required to overcome the increased energy barrier. In terms of first-principles study of chemical combination, complexes of Cu and Si have been structuralized in trigonal, hexagonal and tetragonal crystals. Stability of the crystal structures has been investigated from the aspect of mechanical and lattice stability. Tetragonal Cu3Si is proved to be the only crystal structure with both mechanical and lattice stabilities. The elastic constants, electronic structure and thermodynamical properties of the stable Cu3Si are also revealed. The results indicate the tetragonal Cu3Si exhibits metallic behaviors with good thermodynamical properties. The current study could provide meaningful insights on the inhabitation of Cu contamination and performance improvement.

First-principles Study of Copper Contamination in Silicon Semiconductor

Electronic Transport Properties of Silicon Carbide Molecular Junctions: First-Principles Study

Interficial Stability of Cu/Cu(Ru)/Si Contact System for Barrier-Free Copper Metallization

ReaxFF Reactive Force Field Development for Cu/Si Systems and application to Copper Cluster Formation During Cu Diffusion Inside Silicon

First-Principles Study Of Transition Metal Impurities In Si

The Interdiffusion and Solid-State Reaction of Low-Energy Copper Ions Implanted in Silicon

Interfacial Stabilities, Electronic Properties and Interfacial Fracture Mechanism of 6H-Sic Reinforced Copper Matrix Studied by the First Principles Method

Copper diffusivity in silicon: A re-examination

First-principles Investigation of Site Preference and Diffusion Behaviors of Carbon in Copper

First-principles investigation of Cu/Ti-TM/Si (TM=W, Ru) interfaces: Role of Ti-TM binary alloys as diffusion barrier layers

Ab initio study of subsurface diffusion of Cu on the H-passivated Si(001) surface

First-Principles Calculation on the Influence of Alloying Elements on Interfacial Features of W-Cu System

First principles calculations on stability, electronic structure and fracture failure of Cu-doped Al(100)/Mg 2 Si(111) interface

Co contamination of Si: Plating & aging

Optimal doping elements for inhibiting surface-diffusion of adatoms on Cu3Sn

Revealing the adhesion, stability, and electronic structure of SiC/M (M=Au, Pt) interface: A first-principles study

Unraveling diffusion behavior in Cu-to-Cu direct bonding with metal passivation layers

Studies of two-dimensional MoS2 on enhancing the electrical performance of ultrathin copper films

Density Gradient Segregation of Cu at the Si2Hf/Al Interface in an Al-Si-Cu-Hf Alloy

Study on copper-to-copper bonding of three-dimensional integrated circuits using the quasicontinuum method

Diffusivity and atomic mobility in fcc Cu–Mn–Si alloys: measurements and modeling by CALTPP program